Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation

Koji Nakayama; Atsushi Tanaka; Katsunori Asano; Tetsuya Miyazawa; Masahiko Ito; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.717-720.989

Paper Titles

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
p.973

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
p.977

Positive Temperature Coefficient SiC PiN Diodes
p.981

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
p.985

Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
p.989

Physical Modelling of 4H-SiC PiN Diodes
p.993

Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices
p.997

Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches
p.1001

Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control
p.1005

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Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation

Abstract:

The forward voltage drops of pin diodes with the carbon implantation process or thermal oxidation process using a drift layer of 120 μm thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of diodes with the standard process or carbon implantation at room temperature show almost the same tendency. In the reverse recovery characteristics at 250 oC, pin diodes with carbon implantation process, however, have the longer reverse recovery time than those with the standard process. These characteristics indicate that a recombination path other than the bulk carrier lifetime, such as the interfaces or the surface recombination, becomes dominant in the reverse recovery characteristics at room temperature.