Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches

Xue Chao Liu; Wei Huang; Shao Hui Chang; Ming Xing Zhu; Jian Hua Yang; Er Wei Shi

doi:10.4028/www.scientific.net/MSF.717-720.1001

Paper Titles

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
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Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
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Physical Modelling of 4H-SiC PiN Diodes
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Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches
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Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control
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Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions
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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors
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Demonstration of SiC Vertical Trench JFET Reliability
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Effect of Surface Morphology on the On-State...

Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches

Abstract:

The photoconductive semiconductor switches (PCSS) were fabricated on V-doped semi-insulating 6H-SiC. We studied the effect of surface morphology on the on-state resistance of SiC PCSS. The SiC wafers with quite similar physical properties were processed by mechanical polishing, chemical mechanical polishing and H2 etching for producing different surface morphologies. All the SiC PCSS were excited by a 355 nm laser with a frequency of 10 Hz and a pulse intensity of 132 μJ/mm². We found that the surface morphology had an obvious effect on the on-state resistance. The PCSS fabricated on mechanical polished SiC wafer with an average surface roughness (rms) of 1.0 nm showed the largest on-state resistance of 45.6 ohms, while a low value of 13.3 ohms was observed for the wafer processed by H2 etching at high temperature of 1550 °C.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1001-1004

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1001

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Online since:

May 2012

Authors:

Xue Chao Liu, Wei Huang, Shao Hui Chang, Ming Xing Zhu, Jian Hua Yang, Er Wei Shi

Keywords:

On-State Resistance, Photoconductive Semiconductor Switches (PCSS), Semi-Insulating, V-Doped Silicon Carbide

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