Novel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control

Shigeharu Yamagami; Tetsuya Hayashi; Masakatsu Hoshi

doi:10.4028/www.scientific.net/MSF.717-720.1005

Paper Titles

Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
p.989

Physical Modelling of 4H-SiC PiN Diodes
p.993

Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices
p.997

Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches
p.1001

Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control
p.1005

Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions
p.1009

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors
p.1013

Demonstration of SiC Vertical Trench JFET Reliability
p.1017

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing
p.1021

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Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control

Abstract:

We experimentally investigated a method of controlling the energy barrier height (ΦB) of polycrystalline silicon (poly-Si)/4H-SiC heterojunction diodes (HJDs) and conducted a numerical simulation of a novel low Von and low reverse recovery current diode using ΦB control. The ΦB of the HJD with arsenic-doped n+-poly-Si was 0.79 eV and that of the HJD with boron-doped p+-poly-Si was 1.59 eV. The ΦB can be controlled over a wide range by varying the dopant and ion implantation dose of poly-Si. A novel merged HJD (M-HJD) with two different ΦB values obtained by using ΦB control is also presented. The numerical simulation results show that the M-HJD reduces Von without increasing reverse leakage current at high reverse voltage.