Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions

Ryo Amano; Masaki Goto; Yoshimine  Kato; Kungen Teii

doi:10.4028/www.scientific.net/MSF.717-720.1009

Paper Titles

Physical Modelling of 4H-SiC PiN Diodes
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Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches
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Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control
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Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions
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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors
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Demonstration of SiC Vertical Trench JFET Reliability
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Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing
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Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Fabrication of 4H-SiC/Nanocrystalline Diamond PN...

Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions

Abstract:

Nitrogen-incorporated, n-type nanocrystalline diamond (NCD) films are deposited on p-type Si(001) and 4H-SiC(0001) substrates by moderate-pressure, microwave plasma-enhanced chemical vapor deposition using a mixture of 1%CH4-30%N2-69%Ar. X-ray diffraction and visible Raman spectroscopy reveal that the structure of the NCD films is identical independent of the substrate materials, such that diamond nanoparticles with apparent crystal sizes of 5-8 nm are embedded in amorphous sp² carbon matrix. For p-Si/n-NCD heterojunctions in a diode configuration, the rectifying behavior in current-voltage curves depends upon the substrate temperature for film deposition, and the rectification ratio reaches a maximum of about 300 when the film is deposited at 830 °C. For p-4H-SiC/n-NCD heterojunctions, the rectification ratio increases greatly to about 10000 when the film is deposited at 830 °C due exclusively to suppression of the reverse leakage current.

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Silicon Carbide and Related Materials 2011

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Materials Science Forum (Volumes 717-720)

Pages:

1009-1012

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1009

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Online since:

May 2012

Authors:

Ryo Amano, Masaki Goto, Yoshimine Kato, Kungen Teii

Keywords:

4H-SiC, Diode, Doping, Microwave Plasma CVD, Nanocrystalline Diamond

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