Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Megan Snook; Ty McNutt; Chris Kirby; Harold Hearne; Victor Veliadis; Bettina Nechay; Sharon Woodruff; R.S. Howell; Joseph White; Stuart Davis

doi:10.4028/www.scientific.net/MSF.717-720.977

Paper Titles

11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode
p.961

Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
p.965

600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide
p.969

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
p.973

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
p.977

Positive Temperature Coefficient SiC PiN Diodes
p.981

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
p.985

Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
p.989

Physical Modelling of 4H-SiC PiN Diodes
p.993

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Single Photolithography/Implantation 120-Zone...

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Abstract:

The multi-zone junction termination extension (MJTE) is a widely used edge termination technique for achieving high voltage SiC devices. It is commonly implemented with multiple lithography and implantation events. In order to reduce process complexity, cycle time, and cost, a single photolithography and single implant MJTE technique has been successfully developed. The method utilizes a pattern of finely graduated oxide windows that filter the implant dose and create a graded MJTE in a single implant and single photolithography step. Based on this technique, 6 kV / 0.09 cm2 PiN diodes were fabricated utilizing a 120-zone single-implant JTE design. This novel single-implant MJTE design captures 93% of the ideal breakdown voltage and has comparable performance and yield to a baseline three implant process.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

977-980

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.977

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Online since:

May 2012

Authors:

Megan Snook, Ty McNutt, Chris Kirby, Harold Hearne, Victor Veliadis, Bettina Nechay, Sharon Woodruff, R.S. Howell, Joseph White, Stuart Davis

Keywords:

Blocking Voltage, Diode, High Voltage (HV), Junction Termination Extension (JTE), Multi-Zone JTE, Photolithography, PiN, Silicon Carbide (SiC), Single Implant

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References

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