600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide

Gabriel Civrac; Farah Laariedh; Nicolas Thierry-Jebali; Mihai Lazar; Dominique Planson; Pierre Brosselard; Jawad Hassan; Anne Henry; Erik Janzén; Bertrand Vergne; Sigo Scharnholz

doi:10.4028/www.scientific.net/MSF.717-720.969

Paper Titles

Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes
p.953

Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C
p.957

11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode
p.961

Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
p.965

600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide
p.969

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
p.973

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
p.977

Positive Temperature Coefficient SiC PiN Diodes
p.981

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
p.985

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720600 V PIN Diodes Fabricated Using On-Axis 4H...

600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide

Abstract:

This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltage than those expected.

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Materials Science Forum (Volumes 717-720)

Pages:

969-972

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.969

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Online since:

May 2012

Authors:

Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz

Keywords:

4H-SiC, Bipolar Diode, On-Axis Epitaxial Growth

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References

[1] C. Raynaud, D. Tournier, H. Morel, and D. Planson, Diam. Rel. Mat. Vol. 19 (2010), pp.1-6

Google Scholar

[2] J. P. Bergmann, H. Lendenmann, P. Å. Nilsson, U. Lindefelt, and P. Skytt: Mater. Sci. Forum Vol.353-356 (2001), pp.299-302

DOI: 10.4028/www.scientific.net/msf.353-356.299

Google Scholar

[3] J. Hassan, J. P. Bergman, A. Henry, and E. Janzen, J. Crystal Growth Vol. 310 (2008), pp.4430-4437

Google Scholar

[4] J. Hassan, J. P. Bergman, A. Henry, and E. Janzen, J. Crystal Growth Vol. 310 (2008), pp.4424-4429

Google Scholar

[5] A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, Appl. Phys. Lett. Vol. 71 (1997), pp.90-92

Google Scholar

[6] F. Simescu, D. Coiffard, M. Lazar, P. Brosselard, and D. Planson, J. Optoelectron. Adv. Mater. Vol. 12 (2010), pp.766-769

Google Scholar

[7] F. Laariedh, M. Lazar, P. Cremillieu, J.-L. Leclercq and D. Planson, HeteroSiC-WASMPE'11 Conference, Tours, France (2011)

Google Scholar