Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode

Katsunori Asano; Atsushi Tanaka; Shuuji Ogata; Koji Nakayama; Yoichi Miyanagi

doi:10.4028/www.scientific.net/MSF.717-720.965

Paper Titles

12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
p.949

Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes
p.953

Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C
p.957

11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode
p.961

Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
p.965

600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide
p.969

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
p.973

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
p.977

Positive Temperature Coefficient SiC PiN Diodes
p.981

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Transient Electrical Characteristics of Electron...

Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode

Abstract:

The transient electrical characteristics of the forward recovery and reverse recovery characteristics of lifetime-controlled high blocking voltage 4H-SiC pin diodes by electron irradiation are investigated. Even at a heavy electron dose of 1×1014 cm-2, the forward voltage overshoot of a 4H-SiC pin diode is lower than that of a 2 kV/100 A class Si fast diode. As for the reverse recovery characteristics, small reverse recovery current and fast reverse recovery time are obtained by electron irradiation. The reduction ratio of recovery loss can therefore exceed the increase ratio of steady-state loss by electron irradiation.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

965-968

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.965

Citation:

Cite this paper

Online since:

May 2012

Authors:

Katsunori Asano, Atsushi Tanaka, Shuuji Ogata, Koji Nakayama, Yoichi Miyanagi

Keywords:

4H-SiC, Forward Recovery, Forward Voltage Overshoot, PiN Diode, Reverse Recovery

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y. Sugawara, K. Asano, R. Singh, and J. W. Palmour, Proceedings of ICSCRM'99, p.170 (1999).

Google Scholar

[2] Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour, and S. Ogata, Proceedings of ISPSD'04, p.365–368 (2004).

Google Scholar

[3] M. K. Das, Q. Zhang, R. Callanan, C. Capell, J. Clayton, M. Donofrio, S. Haney, F. Husna, C. Jonas, J. Richmond, and J. J. Sumakeris, Mater. Sci. Forum, Vols. 600-603 (2009), pp.1183-1186.

DOI: 10.4028/www.scientific.net/msf.600-603.1183

Google Scholar

[4] L. Storasta and H. Tsuchida, Appl. Phys. Lett, 90, 062116 (2007).

Google Scholar

[5] T. Hiyoshi and T. Kimoto, Appl. Phys. Express, 2, 041101 (2009).

Google Scholar

[6] T. Miyazawa, M. Ito, and H. Tsuchida, Mater. Sci. Forum, Vols. 679-680 (2011), pp.197-200.

Google Scholar

[7] Y. Sugawara, S. Ogata, Y. Miyanagi, K. Asano, S. Ogata, A. Tanaka, K. Nakayama, and T. Izumi, Mater. Sci. Forum, Vols. 600-603 (2009), pp.1179-1182.

DOI: 10.4028/www.scientific.net/msf.600-603.1179

Google Scholar

[8] Y. Sugawara, S. Ogata, T. Izumi, K. Nakayama, Y. Miyanagi, K. Asano, A. Tanaka, S. Okada, and R. Ishii, Proceedings of ISPSD'09, pp.331-334 (2009).

Google Scholar

[9] K. Asano, Y. Sugawara, A. Tanaka, Y. Miyanagi, K. Nakayama, S. Ogata, S. Okada, T. Izumi, and R. Ishii, Proceedings of ISPSD'08, pp.256-259 (2008).

Google Scholar

[10] B. Jayant Baliga, "Fundamentals of Power Semiconductor Devices," Springer, p.236 (2008).

Google Scholar

[11] S. Ogata, Y. Miyanagi, K. Nakayama, A. Tanaka, and K. Asano, Proceedings of ISPSD'11, pp.296-299 (2011).

Google Scholar