11.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode

Megan Snook; Harold Hearne; Ty McNutt; Victor Veliadis; Bettina Nechay; Sharon Woodruff; R.S. Howell; David Giorgi; Joseph White; Stuart Davis

doi:10.4028/www.scientific.net/MSF.717-720.961

Paper Titles

Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses
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12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
p.949

Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes
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Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C
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11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode
p.961

Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
p.965

600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide
p.969

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
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Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
p.977

HomeMaterials Science ForumMaterials Science Forum Vols. 717-72011.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV /...

11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode

Abstract:

To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required. This increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, paralleling discrete devices increases package volume/weight and reduces power density. To overcome these complexities, PiN diodes were designed, fabricated at high yields, tested, and interconnected on a three-inch 4H-SiC wafer to form an 11.72 cm² wafer-scale diode. The wafer-scale diode exhibited a breakdown voltage of 1790 V at an extremely low leakage current density of less than 0.002 mA/cm². Under pulsed conditions, the peak current through the wafer-scale diode is 64.3 kA with a forward voltage drop of 10.3 V. The dissipated energy was 382 J and the action exceeded 1.7 MA²-sec.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

961-964

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.961

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Online since:

May 2012

Authors:

Megan Snook, Harold Hearne, Ty McNutt, Victor Veliadis, Bettina Nechay, Sharon Woodruff, R.S. Howell, David Giorgi, Joseph White, Stuart Davis

Keywords:

PiN Diode, Pulsed Power, Silicon Carbide (SiC), Wafer-Scale Interconnection

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References

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