Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes

Abstract:

Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone JTE and Space-Modulated JTE (SM-JTE), a breakdown voltage over 15 kV, corresponding to about 93 % of the parallel-plane breakdown voltage, was realized. The window of optimum JTE dose to obtain high breakdown voltage was widened, which indicates the robustness to the deviation of JTE dose. By comparing the breakdown voltage obtained by simulation and experimental results, impacts of the charge near the SiO₂/SiC interface are discussed.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 973-976
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.973
• Online since: May 2012
• Authors: Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto
• Keywords: Breakdown, Interface Charges, Junction Termination Extension (JTE), PiN Diode

References

[1] A. Agarwal, M. Das, S. Krishnaswami, J. Palmour, J. Richmond and S-H. Ryu: Mater. Res. Soc. Symp. Proc., vol. 815 (2004), p.243.

[2] Q. Zhang, C. Jonas, J. Sumakeris, A. Agarwal and J. Palmour: Mater. Sci. Forum, vol. 600-603 (2009), p.1187.

[3] R.S. Howell, S. Buchoff, S. Van Campensen, T.R. McNutt, A. Ezis, B. Nechay, C.F. Kirby, M.E. Sherwin, R.C. Clarke and R. Singh: IEEE Trans. Electron Devices, vol. 55 (2008), p.1807.

DOI: 10.1109/ted.2008.928204

[4] T. Hiyoshi, T. Hori, J. Suda and T. Kimoto: IEEE Trans. Electron Devices, vol. 55 (2008), p.1841.

[5] R. Pérez, D. Tournier, A. Pérez-Tomás, P. Godignon, N. Mestres and J. Millán: IEEE Trans. Electron Devices, vol. 52 (2005), p.2309.

[6] R. Ghandi, B. Buono, M. Domeij, G. Malm, C-M. Zetterling and M. Östling: IEEE Electron Device Lett., vol. 24 (2009), p.1170.

DOI: 10.1109/led.2009.2030374

[7] P.A. Loose, S. K. Balachandran, L. Zhu, C. Li, J. Seiler, T. P. Chow and I.B. Bhat: Proc. of Int. Symp. Power Semicond. Devices & ICs 2004, p.301.

[8] G. Feng et al; ICSCRM 2011, Tu-p-4.

[9] A. O. Konstantinov, Q. Wahab, N. Nordell and U. Lindefelt: Appl. Phys. Lett., vol. 71 (1997), p.90.

[10] H. Lendenmann, A. Mukhitdinov, F. Dahlquist, H. Bleichner, M. Irwin, R. Söderholm and P. Skytt: Proc. of Int. Symp. Power Semicond. Devices & ICs 2001, p.31.

[11] M. Noborio, J. Suda and T. Kimoto: IEEE Trans. Electron Devices, vol. 56 (2009), p.1953.

[12] R. Ghandi, B. Buono, M. Domeij, R. Esteve, A. Schöner, J. Han, S. Dimitrijev, S.A. Reshanov, C-M. Zetterling and M. Östling: IEEE Trans. Electron Devices, vol. 58 (2011), p.259.

DOI: 10.1109/ted.2010.2082712