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Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes

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Abstract:

Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone JTE and Space-Modulated JTE (SM-JTE), a breakdown voltage over 15 kV, corresponding to about 93 % of the parallel-plane breakdown voltage, was realized. The window of optimum JTE dose to obtain high breakdown voltage was widened, which indicates the robustness to the deviation of JTE dose. By comparing the breakdown voltage obtained by simulation and experimental results, impacts of the charge near the SiO2/SiC interface are discussed.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

973-976

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.973

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Online since:

May 2012

Authors:

Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto

Keywords:

Breakdown, Interface Charges, Junction Termination Extension (JTE), PiN Diode

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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