Positive Temperature Coefficient SiC PiN Diodes

Eugene A. Imhoff; Karl D. Hobart; Francis J. Kub; M.G. Ancona; Rachael L. Myers-Ward; N.Y. Garces; Virginia D. Wheeler; Luke O. Nyakiti; Charles R. Eddy; D. Kurt Gaskill

doi:10.4028/www.scientific.net/MSF.717-720.981

Paper Titles

Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
p.965

600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide
p.969

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
p.973

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
p.977

Positive Temperature Coefficient SiC PiN Diodes
p.981

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
p.985

Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
p.989

Physical Modelling of 4H-SiC PiN Diodes
p.993

Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices
p.997

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Positive Temperature Coefficient SiC PiN Diodes

Positive Temperature Coefficient SiC PiN Diodes

Abstract:

Integration of patterned ballast resistance into the anode of SiC PiNs is a solution to the dilemma of negative dV_f/dT for such diodes. In fabricated 4H-SiC PiN diodes, we demonstrate a cross-over from negative to positive temperature coefficient for current densities as low as 80 A/cm². Adjusting the percentage of the patterned anode area, the positive or neutral dV_f/dT can be achieved over a wide current-density range without substantial penalty in the forward voltage drop. This characteristic is crucial for high-power SiC packages with ganged-parallel rectifier arrays.