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This conference provides a prominent international forum for reporting new developments in the areas of wide bandgap semiconductors (SiC, GaN, AlN, diamond, Ga2O3, ZnO, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device.
As many as 20 invited talks and 50 contributed presentations were given, providing a stimulating overview of the latest advances in wide bandgap semiconductors technology.
Liwei Guo (Institute of Physics, CAS, China) Yasuto Hijikata (Saitama University, Japan) Wei Huang (Fudan University, China) Chih-Fang Huang (National Tsing Hua University, Taiwan) Fengyi Jiang (Nanchang University, China) Zhanping Lai (The 46th Research Institut of China Electronic Technology Group Corporation, China) Chwan-Ying Lee (Hestia Power Inc., Taiwan) Kung-Yen Lee (National Taiwan University, Taiwan) Shunfeng Lee (Dongguan Institute of Opto-Electronics Peking University, China) Sooseong Kim (TRinno Technology, Korea) Bingbing Liu (Jilin University, China) Calvin Liu (Globalwafers Co., Ltd., Taiwan) Guoyou Liu (Zhuzhou CRRC Times Electric Co., Ltd., China) Xinyu Liu (Institute of Microelectronics, CAS, China) Xuechao Liu (Shanghai Institute of Ceramics, CAS, China) Guoquan Lu (Virginia Tech., USA) Hideharu Matsuura (Osaka Electro-Communication University, Japan) Tokuyasu Mizuhara (ROHM Semiconductor (Shanghai) Co., Ltd., Japan) Puqi Ning (Institute of Electrical Engineering
, CAS, China) Chulmin Oh (Korea Electronic Technology Institute, Korea) Tonghua Peng (TankeBlueSemiconductor Co., Ltd., China) Yufeng Qiu (Global Energy Internet Institute, China) Mark Ramm (STR Group, Inc., Russia) Bo Shen (Peking University, China) Guosheng Sun (Institute of Semiconductors, CAS, China) Koukou Suu (ULVAC, Inc., Japan) Xuhui Wen (Institute of Electrical Engineering, CAS, China) Ke Xu (Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, China) Kouji Yamaguchi (Fuji Electric Co., LTD., Jpan) Anping Zhang (Xi'an Jiaotong University, China) Q.

Sustainability & Life Cycle Analysis of 3D Printing Industries Yi Wei Daniel Tay1,a, Ming-Jen TAN1,2,b* 1Singapore Centre for 3D Printing, School of Mechanical & Aerospace Engineering, 2HP-NTU Digital Manufacturing Corporate Lab, Nanyang Technological University, Singapore adanieltay@ntu.edu.sg, bmmjtan@ntu.edu.sg *corresponding author Keywords: Sustainability, Life Cycle Analysis, 3D Printing.
Sustainability The World Economic Forum’s Global Futures Council on Advanced Manufacturing & Value Chains have produced numerous white papers [2,3] and resources on sustainability.
Although 3DP has permeated industries like electronics, energy, biomedical, food/cell etc., manufacturing and construction and remain the mainstay in terms its impact on sustainability. 3D Printing can also be a main part of the solution for many engineering problems by enabling technologies such as lightweighting, integrated products and materials, local production, and the use of environmentally-friendly materials.
Vasilakopoulou, “Present and future energy consumption of buildings: Challenges and opportunities towards decarbonisation,” e-Prime - Advances in Electrical Engineering, Electronics and Energy, vol. 1,(2021) 100002
Tan, “Extrudable region parametrical study of 3D printable concrete using recycled glass concrete,” Journal of Building Engineering, 50, (2022) 104091 [19] G.

Introduction The study of non-linear, unsteady, natural convective MHD fluid flow through the duct is getting importance due to its many engineering applications, such as heat exchangers, building insulation, polymer extrusion, geothermal energy exploration, underground cables and chemical engineering.
Radiative heat transfer plays a very important role in many engineering systems operating at high temperature.
Thermal radiation in fluid flow with heat and mass transfer processes is of major interest in the design of many advanced energy conversion systems operating at high temperature.
Bull., Series D: Mechanical Engineering, 79(1) (2017) 91-106
Straughan (2010) Rotating porous convection with prescribed heat flux, International Journal of Engineering Science, 48(7/8) (2010) 685-692.

Classification Syllogism in the Farm Vehicle Design based on the Kansei Engineering Z.
This is the basis of Kansei Engineering to guide the design.
Fig.4: Classification Syllogism based on Kansei Engineering.
Kansei engineering, (1995) [3] 長い町は三生まれます.
International design expert's collection of thesis of the management forum. (2004)

Lesz 1,b 1 Institute of Engineering Materials and Biomaterials, Silesian University of Technology, ul.
Introduction Advanced high strength steels (AHSS) containing metastable retained austenite require new ideas of chemical composition design and structure forming concepts.
Borek: Archives of Materials Science and Engineering Vol. 37 (2009), pp. 69-76
Grajcar: Journal of Achievements in Materials and Manufacturing Engineering Vol. 30 (2008), pp. 27-34
Grzegorczyk: Journal of Achievements in Materials and Manufacturing Engineering (2011), in press

This paper discusses the effect of advanced sintering technologies – sinter + hot isostatic pressing (HIP) and sinter/HIP - on the performance of TiC-based cermets.
The advanced TiC-cermet demonstrated the blanking performance exceeding that of ordinary carbide composites by a factor of 1.5 ... 2. 3.3.
Kübarsepp, Wear of advanced cemented carbides for metalforming tool materials, Wear, 256 (2004) 846-853
Materials Science Forum, 534-536 (2007) 1169-1172
Estonian Journal of Engineering 15 (4) (2009) 283-292.

Comparing two examination methods for measuring metal to artery ratio of coronary stents Miksa Kovács1,a, Dóra Károly1,b László Dévényi1,c 1Department of Materials Science and Engineering, Faculty of Mechanical Engineering, Budapest University of Technology and Economics, 1111 Budapest Bertalan L. u. 7., Hungary amiksa.kovacs@gmail.com, bkaroly.dora@gmail.com, cdevenyi@eik.bme.hu Keywords: coronary stent, metal to artery ratio (MAR), metallic surface area (MSA), stent pattern, cell size, maximum achievable cell diameter, examination method.
Hirschberg, Development of nitinol stents: etching experiments, Materials Science Forum, 729 (2013) 240-245
Hirschberg, Development of nitinol stents: electropolishing experiments, Materials Science Forum, 729 (2013) 436-441
Schwartz, Role of stent design and coatings on restenosis and thrombosis, Advanced Drug Delivery Reviews, 58 (2006) 377-386
Advances in Science and Technology, 49 (2006) 91-96.

Utilization of advanced materials in civil engineering motivates research in both experimental and computational methods of reliable identification of their material characteristics, as e.g. the thermal conductivity and diffusivity in semilinear evolutionary equations of heat conduction, coming from the energy balance in classical thermodynamics, or the capillary transfer coefficient in similar equations, coming from the mass balance.
Introduction Development of advanced materials in civil engineering, accompanied with the progress in structures and technologies, requires new experimental and computational methods of identification of their material characteristics.
Šuhajda, The moisture in capillaries of building materials, DPC Journal of Civil Engineering and Architecture 2 (2012) 1536-1543
Chen, Temperature and humidity measurement based on wireless sensor network technology, Key Engineering Materials 439-440 (2010) 46-50
Kala, Sensitivity analysis of steel plane frames with initial imperfections, Engineering Structures 33 (2011) 2342-2349

Frey1),3) 1) University of Erlangen-Nuremberg, Chair of Electron Devices, Cauerstrasse 6, 91058 Erlangen, Germany 2) University of Salerno, Department of Industrial Engineering, Via Giovanni Paolo II, 132, 84084, Fisciano (SA), Italy. 3) Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany E-mail: andreas.huerner@leb.eei.uni-erlangen.de Keywords: Junction Termination Extension, Simulation, Double-Ring Abstract.
Because the internal ring is fabricated simultaneously with the contact implantation and the external ring simultaneously with the single-jte implantation, in comparison to advanced multi-zone JTE-designs no additional implantation steps are mandatory [5].
Because of the large distance of the critical electric field from the mesa-transition, the dependence of the maximum achievable breakdown voltage on the angle of the mesa-transition, and thereby the requirement on advanced etching techniques is reduced drastically.
[4] Nguyen, D.M.; Huang, R.; Phung, L.V.; Planson, D.; Berthou, M.; Godignon, P.; Vergne, B.; and Brosselard, P., “Edge termination design improvements for 10kV 4H-SiC bipolar diodes” Material Science Forum, Vols. 740-742, pp. 609, 612, 2013
[7] Peters D., et al., 2010, Materials Science Forum, Vols. 645-648, pp. 901, 904, 2010

Nozaki1 1 Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan 2 Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma, 370-1292, Japan 3 Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan a iwamoto.naoya@jaea.go.jp Keywords: pn diode, charge collection efficiency, particle detector, electron irradiation Abstract.
The epitaxial layers were grown on 6H-SiC n-type substrates (CREE, 3.5o off, Si-face) by hot-wall chemical vapor deposition (CVD) at National Institute of Advanced Industrial Science and Technology (AIST).
Forum, Vol. 615-617 (2009), p.861 [3] F.
Forum, Vol. 600-603 (2009) p.1043 [5] F.