Preface
Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals
p.3
p.3
Investigation of the 6-Folded Pattern in the Facetted Region of 4° Off-Axis 4H-SiC
p.9
p.9
Effects of Annealing Parameters on Epitaxial Graphene on SiC Substrates
p.14
p.14
Influence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial Graphene
p.21
p.21
Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers
p.26
p.26
Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
p.31
p.31
Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC
p.35
p.35
Study on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport System
p.46
p.46
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 954)
Online since:
May 2019
Сopyright:
© 2019 Trans Tech Publications Ltd. All Rights Reserved
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