Study on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport System

Abstract:

A study on carbon particle inclusions during 4H-SiC bulk growth is presented. Special attentions were paid to design of graphite growth compartment, size of SiC source materials, and process of seed crystal handling. It was found that common carbon inclusions with size of 30μm or less were attributed to carbon particles from graphitized SiC source. Less common carbon inclusions with size of over 100μm were also found and were attributed to poor seed crystal mounting process. In order to reduce carbon inclusions, several experiments were designed by using a NAURA Advanced Physical Vapor Transport (PVT) System APS130G. A graphite plate separator was inserted into the growth compartment to prevent the carbon particles from transporting to the growth surface. SiC powder materials with larger diameters were selected to reduce source graphitization. Additional clean process was performed to remove carbon particle residuals on graphite parts during seed mounting. The results showed significant improvement of carbon inclusion problems in SiC ingots and thus high-quality SiC wafers were made successfully.

• Periodical: Materials Science Forum (Volume 954)
• Pages: 46-50
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.954.46
• Online since: May 2019
• Authors: Zeng Ze Wang, Zhou Li Wu, Ming Ming Ge, Hui Qiang Bao, Zhi Fang Ma, Jun Wu*
• Keywords: Carbon Inclusions, PVT System, Silicon Carbide

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