Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Xing Fang Liu; Guo Guo Yan; Zhan Wei Shen; Zheng Xin Wen; Jun Chen; Ya Wei He; Wan Shun Zhao; Lei Wang; Min Guan; Feng Zhang; Guo Sheng Sun; Yi Ping Zeng

doi:10.4028/www.scientific.net/MSF.954.26

Paper Titles

Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals
p.3

Investigation of the 6-Folded Pattern in the Facetted Region of 4° Off-Axis 4H-SiC
p.9

Effects of Annealing Parameters on Epitaxial Graphene on SiC Substrates
p.14

Influence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial Graphene
p.21

Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers
p.26

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
p.31

Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC
p.35

Study on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport System
p.46

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon
p.51

HomeMaterials Science ForumMaterials Science Forum Vol. 954Theoretical Calculation and Simulation for...

Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Abstract:

The resonant frequency and Q factor of the SiC microcantilever were theoretically analyzed and calculated based on the stereotyped basic theories of the cantilever beam, and the relationship between the vibration mode and structure geometries was also simulated. Modal analysis by means of finite element method was performed on millimeter-, micron-and nanoscale microcantilevers, and the results showed that the smaller the microstructure was, the higher the resonant frequency can be obtained. The Q factor can be extracted from hamonic spectra after modal analysis, and the amplitude of Q factor was about 10⁵. This paper shows that SiC epitaxial layers have great potential in microcantilevers.

You might also be interested in these eBooks

Semiconductors: Silicon Carbide and Related Materials

View Preview

Info:

Periodical:

Materials Science Forum (Volume 954)

Pages:

26-30

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.26

Citation:

Cite this paper

Online since:

May 2019

Authors:

Xing Fang Liu*, Guo Guo Yan, Zhan Wei Shen, Zheng Xin Wen, Jun Chen, Ya Wei He, Wan Shun Zhao, Lei Wang, Min Guan, Feng Zhang, Guo Sheng Sun, Yi Ping Zeng

Keywords:

Calculation, Epitaxial Layer, Microcantilever, Q Factor, Resonant Frequency, SiC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] J.-H. Chen, Enhancement of 5 GHz on-chip bandpass filter performance by using CMOS-MEMS inductors, Microsyst. Technol. 24 (2018) 2371-2377.

DOI: 10.1007/s00542-017-3672-6

Google Scholar

[2] Y. Mita, N. Sakamoto, N. Usami, A. Frappe, A. Higo, B. Stefanelli, H. Shiomi, J. Bourgeois, A. Kaiser, Microscale ultrahigh-frequency resonant wireless powering for capacitive and resistive MEMS actuators, Sens. Actuator A-Phys. 275 (2018) 75-87.

DOI: 10.1016/j.sna.2018.03.020

Google Scholar

[3] B.A. Ganji, S. Kheiry, Design and analysis of a novel MEMS spiral inductor with high quality factor, Microsyst. Technol. 24 (2018) 3321-3328.

DOI: 10.1007/s00542-018-3914-2

Google Scholar

[4] P. Hoang-Phuong, N. Tuan-Khoa, D. Toan, A. Iacopi, L. Hold, M.J.A. Shiddiky, D.V. Dao, N. Nam-Trung, Robust Free-Standing Nano-Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications, Adv. Eng. Mater. 20 (2018) 1700858.

DOI: 10.1002/adem.201700858

Google Scholar

[5] A.V. Lim, T. Karacolak, J.-Y. Jiang, C.-F. Huang, F. Zhao, Electrostatically-Actuated 4H-SiC In-plane and Out-of-Plane High Frequency MEMS Resonator, IEEE Microw. Wirel. Compon. Lett. 26 (2016) 28-30.

DOI: 10.1109/lmwc.2015.2505620

Google Scholar

[6] A.V. Goryk, S.B. Koval'chuk, Elasticity Theory Solution of the Problem on Plane Bending of a Narrow Layered Cantilever Beam by Loads at Its Free End, Mech. Compos. Mater. 54 (2018) 179-190.

DOI: 10.1007/s11029-018-9730-z

Google Scholar

[7] Y. Aoki, K. Honjo, Q-factor definition and evaluation for spiral inductors fabricated using wafer-level CSP technology, IEEE Trans. Microw. Theory Tech. 53 (2005) 3178-3184.

DOI: 10.1109/tmtt.2005.855147

Google Scholar

[8] L. Huang, C. Zhang, Modal analysis of cantilever plate flutter, J. Fluids Struct. 38 (2013) 273-289.

DOI: 10.1016/j.jfluidstructs.2013.01.004

Google Scholar