Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

Abstract:

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH₄-C₂H₄-H₂-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

• Periodical: Materials Science Forum (Volume 954)
• Pages: 31-34
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.954.31
• Online since: May 2019
• Authors: Guo Guo Yan, Xing Fang Liu, Feng Zhang*, Zhan Wei Shen, Wan Shun Zhao, Lei Wang, Ying Xin Cui, Jun Tao Li, Guo Sheng Sun
• Keywords: Chemical Vapor Deposition, Homoepitaxial Growth, On-Axis, SiC

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