Measurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the Sample

Xin Wang; Lei Tian; Jun Sheng Li; Shi Jin Wang

doi:10.4028/www.scientific.net/MSF.954.60

Paper Titles

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
p.31

Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC
p.35

Study on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport System
p.46

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon
p.51

Measurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the Sample
p.60

Study of the Growth Temperature Measurement and Control for Silicon Carbide Sublimation
p.65

Phase Control of Ga₂O₃ Thin Films Grown by Metal-Organic Chemical Vapor Deposition
p.72

Microstructure of Interfacial Basal Plane Dislocations in 4H-SiC Epilayers
p.77

Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers
p.85

HomeMaterials Science ForumMaterials Science Forum Vol. 954Measurement of Resistivity of Silicon Carbide by...

Measurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the Sample

Abstract:

According to the Classical Electrical Theory of Capacitor-to-Resistance Discharge, the Sample of Sic can Be Equivalent to a Parallel Circuit of Resistance and Capacitance. due to the High Resistance of the Wideband-Gap Semiconductors and the Long Discharge Time of the Capacitance, the Samples Resistivity can Be Calculated Manually or by Computer by Applying a Pulse Voltage to the Sample and then Accurately Measuring its Discharge Time. the Measuring Equipment Consists of Sample Stage, Pulse Generator, Charge Converter and Digital Oscilloscope. if High-Speed Data Acquisition Card and Industrial Computer are Used Instead of the Digital Oscilloscope, the Measurement Repeatability can Be Better than 1%, and the Measurement Range is within 10⁴-10¹²Ω•cm.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

60-64

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.60

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Online since:

May 2019

Authors:

Xin Wang*, Lei Tian, Jun Sheng Li, Shi Jin Wang

Keywords:

Contactless Measurement, Resistivity, Semi-Insulating Semiconductor

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References

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