Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers

Yue Wei Liu; Rui Xia Yang; Xiao Deng

doi:10.4028/www.scientific.net/MSF.954.85

Paper Titles

Measurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the Sample
p.60

Study of the Growth Temperature Measurement and Control for Silicon Carbide Sublimation
p.65

Phase Control of Ga₂O₃ Thin Films Grown by Metal-Organic Chemical Vapor Deposition
p.72

Microstructure of Interfacial Basal Plane Dislocations in 4H-SiC Epilayers
p.77

Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers
p.85

Recent Progress of SiC MOSFET Devices
p.90

Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation
p.99

The Correlation between the Reduction of Interface State Density at the SiO₂/SiC Interface and the NO Post-Oxide-Annealing Conditions
p.104

Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing
p.109

HomeMaterials Science ForumMaterials Science Forum Vol. 954Design, Fabrication and Characterization of a...

Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers

Abstract:

In this work, a 4.5kV/50A 4H-SiC PiN rectifiers with mesa combined with double-JTE structures is successfully developed for high power applications. Two-dimension numerical device simulator Silvaco-TCAD is applied to optimizing the electrical performance of fabricated rectifiers. Mesa-combined double-JTE structure is utilized to achieve a high blocking voltage with a wider optimum process latitude. A forward current is 50 A at room temperature when SiC PiN device bias 4.1 V, while the maximum blocking voltage achieved is 4.7 kV, reaching up to 86% of parallel-plane junction bulk breakdown.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

85-89

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.85

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Online since:

May 2019

Authors:

Yue Wei Liu*, Rui Xia Yang, Xiao Deng

Keywords:

Breakdown Voltage, Double Junction Edge Termination, PiN Rectifier, Silicon Carbide

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