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Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition
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Microstructure of Interfacial Basal Plane Dislocations in 4H-SiC Epilayers
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Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers
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Recent Progress of SiC MOSFET Devices
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Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation
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Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing
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Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

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Abstract:

We reported that high oxidation temperature is attributed to break Si-C bond and release nitrogen gas to nitrogen ions over 1350°C. The capacitance-voltage characteristics of SiO2/4H-SiC (0001) MOS capacitors fabricated under different thermal oxidation conditions are compared. The dependence of oxidation temperature on device characteristics (such as VFB and ΔVFB) is also analyzed. After a high temperature oxidation, the device reliability of SiC MOS is improved. Such behavior can be attributed to the reduction of the interface traps during high temperature oxidation.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

99-103

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.99

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Online since:

May 2019

Authors:

Heng Yu Xu*, Cai Ping Wan, Jin Ping Ao

Keywords:

4H-SiC/SiO2 Interface, High Temperature, Interface State Density, Thermal Oxidation

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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