Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices

Abstract:

70-um thick homoepitaxial layers with very low defect density were grown on 6-inch 4° off-axis wafers using hot-wall chemical vapor deposition (CVD). Process optimization resulted in reduction of the density of triangular defects from 1.01 cm^-2 to 0.14 cm^-2. The treatment of wafer (CMP or selection) was essential. The in-situ etch process was optimized prior to the epitaxial growth. Junction Barrier Schottky diodes fabricated on the epitaxial films presented a typical I–V characteristic and a block voltage of 6500 V.

• Periodical: Materials Science Forum (Volume 954)
• Pages: 114-120
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.954.114
• Online since: May 2019
• Authors: Ying Xi Niu, Xiao Yan Tang*, Li Xin Tian, Liu Zheng, Wen Ting Zhang, Ji Chao Hu, Ling Yi Kong, Xin He Zhang, Ren Xu Jia, Fei Yang, Yu Ming Zhang
• Keywords: 4H-SiC, Defect, Epitaxy, Hot-Wall CVD, JBS

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