Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS

Hang Gu; Yi Dan Tang; Lan Ge; Yun Bai; You Run Zhang; Ya Fei Luo; Xin Yu Liu; Guan Song; Ben Tan

doi:10.4028/www.scientific.net/MSF.954.139

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HomeMaterials Science ForumMaterials Science Forum Vol. 954Simulation of Electrothermal Characteristics of...

Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS

Abstract:

In this paper the electrothermal properties of the 4H-SiC JBS (Junction barrier Schottky) diode is investigated. FloTHERM and Silvaco TCAD are used for electrothermal simulation at the same time. Firstly, the effect of R_jc (junction-to-case thermal resistance) on junction temperature is investigated, the result shows that the junction temperature is more sensitive to the R_jc in the current heating mode because of some kind of positive feedback. Then, a current pulse is applied to the JBS, result shows that this kind of positive feedback is especially noticeable. Finally, the JBS will be compared with PIN under high current density pulsed operation, in order to analyze their thermal sensitivity to R_jc.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

139-143

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.139

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Online since:

May 2019

Authors:

Hang Gu, Yi Dan Tang*, Lan Ge, Yun Bai, You Run Zhang, Ya Fei Luo, Xin Yu Liu, Guan Song, Ben Tan

Keywords:

4H-SiC, FloTHERM, Heating, JBS, Junction-to-Case Thermal Resistance, Silvaco TCAD

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References

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