GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission

Abstract:

In this study, TiN anode GaN Schottky barrier diodes (SBDs) with a low access sheet resistance of 28 Ω/□ were fabricated for microwave power transmission application. The performance of the diodes at room temperature (RT) is comparable with the ideality factor n and Schottky barrier height (SBH) were 1.28 and 0.47 eV for the 8-finger SBDs, 1.22 and 0.49 eV for the 16-finger SBDs, respectively. A low on-resistance of 5.71 and 3.58 Ω were obtained for 8-and 16-finger SBD at RT, respectively. The low series resistance induced by larger anode area of 16-finger SBDs results in a lower turn-on voltage of 0.47 V compared with that of 0.68 V for the 8-finger one. Besides, the temperature dependent current-voltage characteristics demonstrate that the TiN anode has a good temperature stability. And the temperature dependent performance of the 16-finger SBDs present a better uniformity than that of the 8-finger SBDs.

• Periodical: Materials Science Forum (Volume 954)
• Pages: 126-132
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.954.126
• Online since: May 2019
• Authors: Tao Fei Pu, Xiao Bo Li, Xiao Wang, Yu Yu Bu, Liu An Li, Jin Ping Ao*
• Keywords: Gallium Nitride, Multi-Finger, Schottky Barrier Diode, Thermal Characteristics, TiN Anode

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