Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Abstract:

In this work, we investigated the oxide reliability of 4H-SiC (0001) MOS capacitors, the oxide was fabricated about 60 nm by thermal oxidation temperature at 1350°C, the oxides than annealed at different temperatures and times in diluted NO (10% in N₂). The 4H-SiC MOS structure was analyzed by C-V and I-V measurement. Compared the J-E curves and Weibull distribution curves of charge-to-breakdown for fives samples under different annealing temperature and time, it shows that the high annealing temperature improves the electrical properties as the lifetime enhanced. The mode value of field-to-breakdown (E_BD) for thermal oxides by post-oxide-annealing in NO for 30 min at 1350°C was 10.09 MV/cm, the charge-to-breakdown (Q_BD) of this sample was the highest in all samples, and the Q_BD value at 63.2% cumulative failure rate was 0.15 C/cm². The Q_BD of the sample annealing at 1200°C for 120 min was 0.06 C/ cm². The effects of NO annealing in high temperature enhance the lifetime of electrical properties and field-to-breakdown obviously. It can be demonstrated that the annealing temperature as high as 1300°C for 30 min can be used to accelerate TDDB of SiC MOS gate oxide.

• Periodical: Materials Science Forum (Volume 954)
• Pages: 109-113
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.954.109
• Online since: May 2019
• Authors: Heng Yu Xu*, Cai Ping Wan, Jin Ping Ao
• Keywords: 4H-SiC MOS Capacitor, Charge-to-Breakdown (Q_BD), Field-to-Breakdown (E_BD), Reliability of Gate Oxide, Time Dependent Dielectric Breakdown (TDDB)

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