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Phase Control of Ga₂O₃ Thin Films Grown by Metal-Organic Chemical Vapor Deposition
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Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers
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Recent Progress of SiC MOSFET Devices
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Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation
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The Correlation between the Reduction of Interface State Density at the SiO₂/SiC Interface and the NO Post-Oxide-Annealing Conditions
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HomeMaterials Science ForumMaterials Science Forum Vol. 954Recent Progress of SiC MOSFET Devices

Recent Progress of SiC MOSFET Devices

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Abstract:

SiC MOSFETs are superior candidates as next power semiconductor devices for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the optimized structures and operations for SiC MOSFETs with not only the extremely low on resistance but also much higher robustness. Overview on recent device technologies of SiC MOSFETs is given.

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Semiconductors: Silicon Carbide and Related Materials

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Periodical:

Materials Science Forum (Volume 954)

Pages:

90-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.90

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Online since:

May 2019

Authors:

Noriyuki Iwamuro*

Keywords:

SBD-Integrated MOSFET, Short-Circuit Capability, Silicon Carbide, Trench UMOSFET

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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