Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement

Ao Liu; Song Bai; Run Hua Huang; Tong Tong Yang; Hao Liu

doi:10.4028/www.scientific.net/MSF.954.133

Paper Titles

Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing
p.109

Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices
p.114

Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO₂
p.121

GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission
p.126

Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement
p.133

Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS
p.139

The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET
p.144

An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge
p.151

An Optimized p⁺Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions
p.157

HomeMaterials Science ForumMaterials Science Forum Vol. 954Research on Threshold Voltage Instability in SiC...

Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement

Abstract:

The mechanism of threshold voltage shift was studied. It is believed that the instability in threshold voltage during gate bias stress is due to capture of electrons by the SiC/gate dielectric interface traps and the gate dielectric near interface traps. New experimental platform was designed and built successfully. When positive stress or negative stress is applied to the gate, the change of threshold voltage occur immediately. After stress removal, the recovery of the threshold voltage occur soon. The change and recovery of threshold voltage are very sensitive to time. In order to get accurate threshold voltage drift data after high-temperature gate bias experiment, test of threshold voltage must be carried out immediately after the experiment.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

133-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.133

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Online since:

May 2019

Authors:

Ao Liu*, Song Bai, Run Hua Huang, Tong Tong Yang, Hao Liu

Keywords:

Interface States, SiC MOSFET, Threshold Voltage Recovery

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References

[1] Santini T, Sebastien M, Florent M. Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications. Proceedings of IEEE ECCE Asia Downunder. Melbourne, VIC, Australia,2013:385-391.

DOI: 10.1109/ecce-asia.2013.6579125

Google Scholar

[2] A.J. Lelis,D.Habersat,G.Lopez J.M.McGarrity F.B.McLean,and N.Goldsman.Mater.Sci.Forum, Vols.527- 529(2006),pp.1317-1320.

DOI: 10.4028/www.scientific.net/msf.527-529.1317

Google Scholar

[3] S.Dhar, S.T. Pantelides, L.C. Feldman, T.Isaacs-Smith, S. Wang, and J.R. Williams, Materials Science Forum (Proceedings of the 2005 ICSCRM), to be published.

Google Scholar

[4] A.Lelis, D.Habersat, R.Green,and N.Goldsman, Materials Science Forum Vols 717-720(2012) pp.465-468.

DOI: 10.4028/www.scientific.net/msf.717-720.465

Google Scholar

[5] K.C. Chang, N.T. Nuhfer L.M. Porter, and Q.Wahab, Appl.Phys.Lett., 77:14(2000), p.2186.

Google Scholar