Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2

Shi Hai Wang; Cai Ping Wan; Heng Yu Xu; Jin Ping Ao

doi:10.4028/www.scientific.net/MSF.954.121

Paper Titles

Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation
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The Correlation between the Reduction of Interface State Density at the SiO₂/SiC Interface and the NO Post-Oxide-Annealing Conditions
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Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing
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Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices
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Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO₂
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GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission
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Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement
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Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS
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The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET
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HomeMaterials Science ForumMaterials Science Forum Vol. 954Effect of Grinding-Induced Stress on Interface...

Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO₂

Abstract:

Back-grinding process was applied to the 4H-SiC (0001) epitaxial wafers. We found that the parameters about stress increased after back-grinding process. In our work, the characterization of stress on interface state density (D_it) of SiC/SiO₂ was investigated. Furthermore, the absorption of peak frequencies was also observed by fourier transform infrared spectroscopy attenuated total reflection (ATR-FTIR) analysis, and the D_it of SiC/SiO₂was obtained by quasi-static capacitance voltage (QSCV) measurement as well as C-φ_s method. The above results suggested that the D_it increased with the increasing grinding-induced stress.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

121-125

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.121

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Online since:

May 2019

Authors:

Shi Hai Wang, Cai Ping Wan, Heng Yu Xu*, Jin Ping Ao

Keywords:

ATR-FTIR, Grinding-Induced Stress, SiC MOS

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