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HomeMaterials Science ForumMaterials Science Forum Vol. 954An Optimized p+ Shielding 4H-SiC Trench Gate...

An Optimized p⁺Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions

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Abstract:

In this paper, an optimized p⁺ shielding 4H-SiC trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with floating regions is proposed. The p⁺ shielding region is moved down to gain a low device on-resistance and the floating regions are designed to improve the breakdown voltage in the proposed structure. Specific on-resistances of the proposed 4H-SiC UMOSFETs is 2.62 mΩ.cm² at V_GS=18 V and V_DS=10 V, compared with 4.77 mΩ.cm² for the conventional p+ shielding UMOSFETs structure with same breakdown voltage. The on-resistance and figure of merit (FOM = V_BR²/R_on) improve by 45.1% and 94.2%, respectively.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

157-162

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.157

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Online since:

May 2019

Authors:

Kai Tian, Jing Hua Xia, Jin Wei Qi, Shen Hui Ma, Fei Yang, Anping Zhang*

Keywords:

Breakdown Voltage, Figure-of-Merit, Floating Region, Silicon Carbide, Specific On-Resistance, Trench-Gate MOSFETs

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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