Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes

Abstract:

Si/SiC heterostructural impact avalanche transit time (IMPATT) diode indicates of important applications in Terahertz (THz) power source, integrated circuit etc. In this paper, the (n)Si/(p)4H-SiC, (n)Si/(p)6H-SiC, (n)Si/(p)3C-SiC heterostructural double drift region IMPATT diodes operating at the atmospheric window frequency of 0.85 THz are designed by the drift-diffusion model while their static state, large signal and noise properties are numerically simulated. The performance parameters of the studied devices such as breakdown voltage, peak electric field strength, optimal negative conductance, output power, power conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were calculated and compared. This method can guide for optimizing the Si/SiC heterostructural IMPATT device in the future.

• Periodical: Materials Science Forum (Volume 954)
• Pages: 182-187
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.954.182
• Online since: May 2019
• Authors: Jun Ding Zheng, Wen Sheng Wei*, Jian Zhu Ye, Wei Bo Yang, Chang Li, Guan Jun Qiao
• Keywords: IMPATT Diode, Large Signal, Noise, Si/SiC Heterostructure

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