Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Yu Jie Du; Jin Yuan Li; Peng Wang; Mei Ting Cui

doi:10.4028/www.scientific.net/MSF.954.194

Paper Titles

An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge
p.151

An Optimized p⁺Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions
p.157

Simplified Silicon Carbide MOSFET Model Based on Neural Network
p.163

The Effect of Circuit Parameters on Reverse Biased Safe Operating Area of SiC MOSFET
p.170

Effect of Tunneling on Small Signal Characteristics of IMPATT Diodes with SiC Heteropolytype Structures
p.176

Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes
p.182

Research on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail Vehicles
p.188

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance
p.194

Thermo-Mechanical Reliability of 1200V-450A IGBT Module Considering Voids in the Solder Layer
p.202

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Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Abstract:

Silicon carbide (SiC) devices have been gradually applied in power electronic for the characteristics of high voltage, high power densities, elevated operating temperature and low switching energy loss. In this paper, a SiC MOSFET welding power module is proposed based on high voltage Si IGBT standard module structure to evaluate the thermal performance. The thermal lateral spread model expounds the expansion of the heat flow in the vertical crossing of a thermal conductor, and thermal resistance distributions of packaging materials in Silicon carbide and Silicon power module are studied through the COMSOL Multiphysics finite element software based on the thermal lateral spread model assumption that minute changes in thermal conductivity would produce no alterations in heat spreading angle. The result indicate that SiC MOSFET module gives the larger thermal resistance than the Si IGBT module with the same encapsulation structure but higher power densities for SiC, what’s more, the solder for die attach and direct bonding copper which include upper copper, substrate and lower copper contribute more thermal resistance in SiC MOSFET module. The differences of thermal Performance in SiC and Si modules can be obtained to benefit us in optimizing SiC MOSFET power module structure design and packaging materials selection.