Research on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail Vehicles

Wei Jie Li; Dong Yi Meng; Yu Jie Chang; Chun Yang; Yi Lv; Li Jun Diao

doi:10.4028/www.scientific.net/MSF.954.188

Paper Titles

An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge
p.151

An Optimized p⁺Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions
p.157

Simplified Silicon Carbide MOSFET Model Based on Neural Network
p.163

The Effect of Circuit Parameters on Reverse Biased Safe Operating Area of SiC MOSFET
p.170

Effect of Tunneling on Small Signal Characteristics of IMPATT Diodes with SiC Heteropolytype Structures
p.176

Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes
p.182

Research on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail Vehicles
p.188

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance
p.194

Thermo-Mechanical Reliability of 1200V-450A IGBT Module Considering Voids in the Solder Layer
p.202

HomeMaterials Science ForumMaterials Science Forum Vol. 954Research on Performance Contrast between SiC...

Research on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail Vehicles

Abstract:

Power electronic devices are the basis of power converters, and excellent device performance improves that of power converters directly. In this paper we take SiC MOSFET CAS120M12BM2 (1200V/ 120A) and Si IGBT FF150R12KE3G (1200V/150A) as examples, which have the same voltage rating, to apply to the converters of urban rail vehicles, whose switching frequency, power density and efficiency are analyzed and contrasted. The results show that the switching frequency of the SiC MOSFET converter can be increased to 50kHz, at the same time its power density and efficiency are significantly higher than that of the Si IGBT converter.

You might also be interested in these eBooks

Semiconductors: Silicon Carbide and Related Materials

View Preview

Info:

Periodical:

Materials Science Forum (Volume 954)

Pages:

188-193

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.188

Citation:

Cite this paper

Online since:

May 2019

Authors:

Wei Jie Li, Dong Yi Meng, Yu Jie Chang, Chun Yang, Yi Lv, Li Jun Diao*

Keywords:

Converter, Power Density, Si IGBT, SiC MOSFET, Switching Frequency

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] L. Stevanovic, B. Rowden, M. Harfman-Todorovic, et al. High performance SiC MOSFET module for industrial applications[C]. Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on. IEEE, 2016: 479-482.

DOI: 10.1109/ispsd.2016.7520882

Google Scholar

[2] S. Huang. Review on the development and application of SiC power electronic devices [J]. Electronic Test, 2015,(16):127-129.

Google Scholar

[3] B. Zhao, H. Qin, C. Ma, et al. Exploration of switching characteristics of SiC-based power devices [J]. Advanced Technology of Electrical Engineering and Energy. 2014,33(03):18-22.

Google Scholar

[4] K. Liu, C. Li, Y. Li, H. Li. Characteristics of SiC Device and its Application in Railway Traction [J]. High Power Converter Technology, 2016(05):13-17+50.

Google Scholar

[5] Z. Zeng, W. Shao, B. Hu, H. Chen, X. Liao, W. Chen, H. Li, L. Ran. Chances and Challenges of Photovoltaic Inverters With Silicon Carbide Devices [J]. Proceedings of the CSEE, 2017,37(01):221-233.

Google Scholar

[6] C. Zheng, G. Chang, C. Li. Development of 1 700 V/1 600 A High Performance SiC Hybrid IGBT Power Module [J]. High Power Converter Technology, 2015(05):43-48.

Google Scholar

[7] H. Jia. Research and design of Li-ion battery charger for hybrid EMU [D]. Beijing: Beijing Jiaotong University, (2015).

Google Scholar

[8] J. Chen. Research on High Quality Waveform Control and Wireless Parallel Key Technology of Urban Rail Train Auxiliary Power Supply System [D]. Beijing: Beijing Jiaotong University, (2013).

Google Scholar