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Preface This volume contains the manuscripts submitted for the Proceedings of the 16th International Conference on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2015" held from September 20th to 25th in Bad Staffelstein, Germany.
From its beginning, it was intended as an international forum for experts in the field of semiconductor technology, semiconductor device physics and defect physics with participants from academia as well as from industry.
Because the proceedings are distributed at the conference, an early deadline had to be met. 71 manuscripts were submitted until then and organized into the following chapters:  Growth of Mono- and Multi-Crystalline Silicon  Passivation and Defect Studies in Solar Cells  Intrinsic Point Defects and Dislocations in Silicon  Light Elements in Silicon-Based Materials  Properties and Gettering of Transition Metals in Silicon  Radiation- and Impurity-Related Defect Studies in Silicon and Germanium  Thermal Properties of Semiconductors  Luminescence and Optical Properties of Semiconductors  Nano-Sized Layers and Structures  Wide-Bandgap Semiconductors  Advanced Methods and Tools for Investigation of Semiconductor Materials The papers were directly reproduced from the manuscripts submitted by the authors.

Alnot, Molecular Engineering of Organic Semiconductors: Design of Self-Assembly Properties in Conjugated Thiophene Oligomers, J.
Watanabe, μSR Study with Light Irradiation of P3HT:ZnO Nanoparticles as Active Material of Hybrid Solar Cells”, Materials Science Forum 966, 404-408 (2019)
Watanabe, "mSR Study of Charge Motion in Active Layer P3HT:ZnO:PCBM Hybrid Solar Cells", Materials Science Forum 827, 131 (2015)
Watanabe, Charge carrier dynamics of active material solar cell P3HT:ZnO nanoparticles studied by muon spin relaxation (µSR), Advanced Materials Research 896, 477 (2014)
Saragi and Risdiana, Study on the Diffusion Rate of the Charge Carrier Transport in Regio-Random P3HT, Materials Science Forum 966, 471-475 (2019).

High Mobility 4H-SiC p-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2 Emran Ashik1,a*, Veena Misra1,b and Bongmook Lee1,2,c 1Department of Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27606, USA 2College of Engineering, State University of New York Polytechnic Institute, Utica, NY 13502 USA aekashik@ncsu.edu, bvmisra@ncsu.edu, cleeb1@sunypoly.edu Keywords: SiC, MOSFET, Field Effect Mobility, CMOS, Atomic Layer Deposition, Transfer Characteristics, Density of Interface Traps, Threshold Voltage, Saturation Current, Leakage Current Abstract.
This article presents an innovative approach to achieve a high channel mobility for 4H-SiC p-MOSFET via dielectric-semiconductor interface engineering involving atomic layer deposition (ALD) of ultrathin B2O3 and SiO2 stacks.
This is mainly attributed to its capability for both p-type and n-type implantation, as well as its advanced level of process maturity.
Acknowledgement This work was funded by Advanced Research Projects Agency-Energy (ARPA-E) U.S.
Godignon, “Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review,” Mater.

A comparative test is made to investigate the differences between advanced CBN slipstone and ordinary abrasive corundum in performance.
Under the same grinding parameters, a comparative test to investigate the differences between advanced cubic boron nitride (CBN) slipstone and ordinary abrasive corundum in performance by using the advanced German production of thermoelectric temperature reactor.
Jin: Frontiers of Mechanical Engineering in China Vol.2 (2007), p. 65 [3] E.N.
Forum Vol. 626-627 (2009), p. 165 [6] H.M.
Advanced Manufacturing Technology Vol.33 (2007), p.3

Organized by Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, Japan.
Sponsored by ・The Research Institute for the 21st Century of Osaka Prefecture University ・A3 foresight program (NSFC-China, JSPS-Japan, NRF-Korea ) National Research Foundation of Korea (NRF-Korea) Organizing Committee SYMPOSIUM CHAIR Anpo Masakazu, Osaka Prefecture University, Japan General Chair Koichi Niihara, Nagaoka University of Technology, Japan Kozo Ishizaki, Nagaoka University of Technology, Japan SooWohn Lee, Sun Moon University, Korea Yubao Li, Sichuan University, China Academic Committee Masaya Matsuoka, Osaka Prefecture University, Japan Masato Takeuchi, Osaka Prefecture University, Japan Yuichi Ichihashi, Kobe University, Japan Takamasa Onoki, Osaka Prefecture University, Japan Shinya Higashimoto, Osaka Institute of Technology, Japan Kosuke Mori, Osaka University, Japan Takashi Kamegawa, Osaka University, Japan Tohru Sekino, IMRAM, Tohoku University, Japan Shu Yin, Tohoku University, Japan Eiji Tani, Advanced Industrial
Brito, Advanced Industrial Science and Technology Hiromi Nakano, Toyohashi University of Technology Takashi Shirai, Nagoya Institute of Technology International Advisory Committee Junichi Hojo, Kyushu University, Japan Yasuo Uchiyama, Nagasaki University, Japan Junichi Matsushita, Tokai University, Japan Jian-Feng Yang, Xi`an Jiaotong University, China Jun Yang, Xi`an University of Architecture and Technology, China Ke-Zheng Sang, ChangAn University, China Zhen-Lin Lu, Xi`an University of Technology, China Xianhong Wang, ChangChun Institute of Applied Chemistry, China Jiang Lei, Beihang University, China Lian Gao, Shanghai Institute of Ceramics, China ZhengYi Fu, Wuhan University of Technology, China Lidong Chen, Shanghai Institute of Ceramics, China ShaoXiong Zhou, Advanced Technology & materials Co.
The ISEPD2010 meeting provided a forum where researchers are able to present the most advanced and new scientific findings and technologies developments in the filed of ecomaterials processing and design.

Engineering and designing of production technologies of metallic-matrix composites nowadays is a prospective trend in a contemporary science and technology development.
Results Synthesis of a composite material was conducted by means of spark plasma sintering system SPS 10-4 manufactured by Advanced technology Company.
Advanced Materials Research.  880 (2014) 174 - 178 [3] Nekrasova T.V., Melnikov A.G., Martyushev N.V.
Advanced Materials Research. 880 (2014) 141 - 145 [7] Martyushev N.V., Semenkov I.V., Activation of copper and alumina powders in ball mill, J.
Advanced Materials Research. 872 (2013) 137 - 142

Utilization of advanced materials in civil engineering motivates research in both experimental and computational methods of reliable identification of their material characteristics, as e.g. the thermal conductivity and diffusivity in semilinear evolutionary equations of heat conduction, coming from the energy balance in classical thermodynamics, or the capillary transfer coefficient in similar equations, coming from the mass balance.
Introduction Development of advanced materials in civil engineering, accompanied with the progress in structures and technologies, requires new experimental and computational methods of identification of their material characteristics.
Šuhajda, The moisture in capillaries of building materials, DPC Journal of Civil Engineering and Architecture 2 (2012) 1536-1543
Chen, Temperature and humidity measurement based on wireless sensor network technology, Key Engineering Materials 439-440 (2010) 46-50
Kala, Sensitivity analysis of steel plane frames with initial imperfections, Engineering Structures 33 (2011) 2342-2349

Preface This volume contains papers contributed to the 2013 4th International Conference on Advances in Materials and Manufacturing (ICAMMP 2013) held on 18-19 December, 2013 in Kunming, China.
The International Conference on Advances in Materials and Manufacturing is the premier forum for the presentation of new advances and research results in the field of materials and manufacturing processes.
This conference series brings together leading researchers, engineers, and scientists in the materials and processes field through the world.
All papers published in this volume of Advanced Materials Research have been peer reviewed through processes administrated by the organizing committee.
Studies presented in this book cover these topics: Composites, Micro/Nano Materials, Steel/Iron, Ceramics, Metal Alloy Material, Optical / Electrical / Magnetic Materials, Energy Materials, Biomaterials and Technology, Chemical Materials, Film Material, Building Materials, Materials Mechanical Behavior and Fracture, Materials Physics and Chemistry, Selection, Testing and Evaluation of Materials, Surface Engineering / Coatings Technology, Material Forming, Material Machining, Welding and Joining, Materials Processing Technologies, etc.

Preface Dear Distinguished Delegates and Guests, The Organizing Committees warmly welcome you to the 2014 4th International Conference on Advanced Materials Research (ICAMR 2014), held on January 22 -23, 2014 in Macau, China.
ICAMR 2014 is sponsored by Science and Engineering Institute, USA.
The conference is aimed at providing a platform for all of you to present leading-edge work in the fields of Advanced Materials Research.
The main goal of ICAMR 2014 is also to provide international scientific forums for exchange of new ideas focus on Material Science and Engineering Technology.
Yi Cao, School of Electrical Engineering, Henan University of Technology, China Zhijun Zhang, School of Mechanical Engineering and Automation ortheastern University, China Sponsors Science and Engineering Institute, USA

Preface The 3rd International Conference on Material Engineering and Manufacturing (ICMEM 2019) and the 4th International Conference on Materials Engineering and Nanotechnology (ICMEN2019) were dedicated to new research developments and advances in the fields of material engineering, nanotechnology and manufacturing.
The purpose of this meeting was to provide an international forum for recent developments in selected fields of research by bringing together researchers, practitioners and research scholars from all over the world to exchange and share their experiences and research results.
The conferences were intended to provide chances for intensive discussions about their own selected topics, practical challenges encountered and identify future directions for the development of related modeling strategies and engineering techniques on the field of materials science.