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This paper discusses the effect of advanced sintering technologies – sinter + hot isostatic pressing (HIP) and sinter/HIP - on the performance of TiC-based cermets.
The advanced TiC-cermet demonstrated the blanking performance exceeding that of ordinary carbide composites by a factor of 1.5 ... 2. 3.3.
Kübarsepp, Wear of advanced cemented carbides for metalforming tool materials, Wear, 256 (2004) 846-853
Materials Science Forum, 534-536 (2007) 1169-1172
Estonian Journal of Engineering 15 (4) (2009) 283-292.

Nozaki1 1 Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan 2 Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma, 370-1292, Japan 3 Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan a iwamoto.naoya@jaea.go.jp Keywords: pn diode, charge collection efficiency, particle detector, electron irradiation Abstract.
The epitaxial layers were grown on 6H-SiC n-type substrates (CREE, 3.5o off, Si-face) by hot-wall chemical vapor deposition (CVD) at National Institute of Advanced Industrial Science and Technology (AIST).
Forum, Vol. 615-617 (2009), p.861 [3] F.
Forum, Vol. 600-603 (2009) p.1043 [5] F.

Frey1),3) 1) University of Erlangen-Nuremberg, Chair of Electron Devices, Cauerstrasse 6, 91058 Erlangen, Germany 2) University of Salerno, Department of Industrial Engineering, Via Giovanni Paolo II, 132, 84084, Fisciano (SA), Italy. 3) Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany E-mail: andreas.huerner@leb.eei.uni-erlangen.de Keywords: Junction Termination Extension, Simulation, Double-Ring Abstract.
Because the internal ring is fabricated simultaneously with the contact implantation and the external ring simultaneously with the single-jte implantation, in comparison to advanced multi-zone JTE-designs no additional implantation steps are mandatory [5].
Because of the large distance of the critical electric field from the mesa-transition, the dependence of the maximum achievable breakdown voltage on the angle of the mesa-transition, and thereby the requirement on advanced etching techniques is reduced drastically.
[4] Nguyen, D.M.; Huang, R.; Phung, L.V.; Planson, D.; Berthou, M.; Godignon, P.; Vergne, B.; and Brosselard, P., “Edge termination design improvements for 10kV 4H-SiC bipolar diodes” Material Science Forum, Vols. 740-742, pp. 609, 612, 2013
[7] Peters D., et al., 2010, Materials Science Forum, Vols. 645-648, pp. 901, 904, 2010

Preface This volume contains papers contributed to the 2013 4th International Conference on Advances in Materials and Manufacturing (ICAMMP 2013) held on 18-19 December, 2013 in Kunming, China.
The International Conference on Advances in Materials and Manufacturing is the premier forum for the presentation of new advances and research results in the field of materials and manufacturing processes.
This conference series brings together leading researchers, engineers, and scientists in the materials and processes field through the world.
All papers published in this volume of Advanced Materials Research have been peer reviewed through processes administrated by the organizing committee.
Studies presented in this book cover these topics: Composites, Micro/Nano Materials, Steel/Iron, Ceramics, Metal Alloy Material, Optical / Electrical / Magnetic Materials, Energy Materials, Biomaterials and Technology, Chemical Materials, Film Material, Building Materials, Materials Mechanical Behavior and Fracture, Materials Physics and Chemistry, Selection, Testing and Evaluation of Materials, Surface Engineering / Coatings Technology, Material Forming, Material Machining, Welding and Joining, Materials Processing Technologies, etc.

980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors Akio Takatsuka1, a, Yasunori Tanaka1, b, Koji Yano2, c, Tsutomu Yatsuo1, d, and Kazuo Arai3, e 1 Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 2 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Takeda-4, Kofu 400-8511, Japan 3 Research and Innovation Promotion Office, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan aa-takatsuka@aist.go.jp, byasunori-tanaka@aist.go.jp, cyano@esd.yamanashi.ac.jp, dt-yatsuo@aist.go.jp, ek-arai@aist.go.jp Keywords: SiC, buried gate static induction transistor, normally-off, threshold voltage Abstract.
These devices advance to practical use for example, DC-DC converter, DC circuit breaker and so on.
Forum 600-603 (2009) 1071

Classification Syllogism in the Farm Vehicle Design based on the Kansei Engineering Z.
This is the basis of Kansei Engineering to guide the design.
Fig.4: Classification Syllogism based on Kansei Engineering.
Kansei engineering, (1995) [3] 長い町は三生まれます.
International design expert's collection of thesis of the management forum. (2004)

Kida, Development of Fracture Surface Etching (FSE) Method around Non-Metallic Inclusion of SUJ2 Steel, Materials Science Forum, ISSN: 1662-9752, Vol. 971, pp 65-69, (2019)
Rozwadowska, Effect of repeated induction heating on fatigue crack propagation in SAE52100 bearing steel, Advanced Materials Research Vols. 217-218, pp. 1266-1271, (2011)
Kida, Observation of Fracture Surface of Induction-Heated JIS SUJ2 Bearing Steel under Rotating Bending Fatigue, Materials Science Forum, ISSN: 1662-9752, Vol. 904, pp. 24-28, (2017)
[10] Lindeburg, Michael R., Engineer-In-Training Reference Manual Eighth Edition, Professional Publications, Inc., p. 37-39, (2002)

Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs Bhagyalakshmi Kakarlaa*, Thomas Ziemannb, Selamnesh Nidac, Elias Doennid and Ulrike Grossnere Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland akakarla@aps.ee.ethz.ch, bziemann@aps.ee.ethz.ch, cnida@aps.ee.ethz.ch, dedoenni@student.ethz.ch, eulrike.grossner@ethz.ch Keywords: SiC MOSFET, Planar, Trench, Short Circuit Withstand Time.
This parameter is often not specified in the datasheet but is crucial for power electronic system design engineers to limit the short circuit length in the application accordingly.
Oomori, Materials Science Forum, Vols. 600-603, pp. 1123-1126, 2009
Grossner, Materials Science Forum, Vol. 897, pp. 553-556, 2017.

Until now, directional solidification technique becomes more and more important research area and active technology in the field of materials science and engineering.
The aim of present paper is to describe novel directional solidifications processes and their applications to selected advanced materials.
The development of directional solidification plays the same important roles in the field materials science and engineering.
Forum, Vols.475-479 (2005), p. 665 [7] X.
Xie: Science and Technology of Advanced Materials, Vol.2 (2001), P.193

Preface The International Conference on Civil Engineering, Architecture and Building Materials provides a forum for accessing to the most up-to-date and authoritative knowledge from both industrial and academic worlds, sharing best practice in this exciting field of Civil Engineering, Architecture and Building Materials.
Following the success of the inaugural conference, the 2nd CEABM was held in Yantai, China, from 25 to 27 May 2012, organized by School of Civil Engineering of Yantai University, College of Civil and Architecture Engineering of Guizhou University and Hainan Society of Theoretical and Applied Mechanics.
This conference was organized in four simultaneous tracks: "Advances in Civil Engineering", "Advances in Structures", "Advanced Building Materials and Sustainable Architecture" and "Sustainable Environment and Transportation".
The Organizing Committee of CEABM 2012 Organized by: School of Civil Engineering, Yantai University College of Civil and Architecture Engineering, Guizhou University Hainan Society of Theoretical and Applied Mechanics Conference Organization Chairman Prof.
Shilang Xu, Zhejiang University, China Senior Engineer.