Preface and Committees
Growth of Czochralski Silicon Crystals Having Ultralow Carbon Concentrations
p.3
p.3
Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon
p.10
p.10
Orientation Dependency of Dislocation Generation in Si Growth Process
p.15
p.15
Recent Progress of Crystal Growth Technology for Multi-Crystalline Silicon Solar Ingot
p.21
p.21
50 cm Size Seed Cast Si Ingot Growth and its Characterization
p.30
p.30
Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique
p.35
p.35
Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash
p.41
p.41
Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application
p.51
p.51
Preface and Committees
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volume 242)
Online since:
October 2015
Сopyright:
© 2016 Trans Tech Publications Ltd. All Rights Reserved
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