Orientation Dependency of Dislocation Generation in Si Growth Process

Karolin Jiptner; Yoshiji Miyamura; Bing Gao; Hirofumi Harada; Koichi Kakimoto; Takashi Sekiguchi

doi:10.4028/www.scientific.net/SSP.242.15

Paper Titles

Preface and Committees

Growth of Czochralski Silicon Crystals Having Ultralow Carbon Concentrations
p.3

Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon
p.10

Orientation Dependency of Dislocation Generation in Si Growth Process
p.15

Recent Progress of Crystal Growth Technology for Multi-Crystalline Silicon Solar Ingot
p.21

50 cm Size Seed Cast Si Ingot Growth and its Characterization
p.30

Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique
p.35

Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash
p.41

Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application
p.51

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Orientation Dependency of Dislocation Generation...

Orientation Dependency of Dislocation Generation in Si Growth Process

Abstract:

In an attempt to understand how and where dislocations are introduced into Si ingots by temperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar to those in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzed using X-ray topography (XRT) and Scanning InfraRed Polariscopy (SIRP). Hereby, the orientation dependency is taken into account and ingots in (001) and (111) growth orientation are evaluated in this work. It can be found that the dislocation generation takes place at similar regions of the crystal and is independent of orientation, however, their propagation and multiplication differs. This leads to an overall different shape of the dislocation network. Especially intriguing are the long slip lines in the (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude of slip propagation depending on the sample orientation. This effect should be explained by a different activation of slip systems and is discussed in the paper.