Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon
p.10
p.10
Orientation Dependency of Dislocation Generation in Si Growth Process
p.15
p.15
Recent Progress of Crystal Growth Technology for Multi-Crystalline Silicon Solar Ingot
p.21
p.21
50 cm Size Seed Cast Si Ingot Growth and its Characterization
p.30
p.30
Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique
p.35
p.35
Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash
p.41
p.41
Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application
p.51
p.51
Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors
p.61
p.61
Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells
p.67
p.67
Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique
Abstract:
The grain evolution of multicrystalline Si was studied using the ingot grown from microcrystalline template. The grain shape evolution and width increase are not monotonic but may have 3 stages. On the other hand, the grain boundary (GB) analysis suggests that there exit 2 reactions, namely random GB annihilation at the initial stage and Σ3 generation and annihilation at the steady state.
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Periodical:
Solid State Phenomena (Volume 242)
Pages:
35-40
DOI:
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Online since:
October 2015
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© 2016 Trans Tech Publications Ltd. All Rights Reserved
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