Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique

Takashi Sekiguchi; Ronit R. Prakash; Karolin Jiptner; Xian Jia Luo; Jun Chen; Yoshiji Miyamura; Hirofumi Harada

doi:10.4028/www.scientific.net/SSP.242.35

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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Statistical Consideration of Grain Growth...

Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique

Abstract:

The grain evolution of multicrystalline Si was studied using the ingot grown from microcrystalline template. The grain shape evolution and width increase are not monotonic but may have 3 stages. On the other hand, the grain boundary (GB) analysis suggests that there exit 2 reactions, namely random GB annihilation at the initial stage and Σ3 generation and annihilation at the steady state.

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Solid State Phenomena (Volume 242)

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35-40

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.35

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Online since:

October 2015

Authors:

Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada

Keywords:

Cast Method, Grain Boundaries, Grain Growth, Silicon

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References

[1] S. Nara, T. Sekiguchi, J. Chen, Eur. Phys. J. -Appl. Phys. 27 (2004) 389.

Google Scholar

[2] K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido, K. Nakajima, Acta Mater. 54 (2006) 3191.

DOI: 10.1016/j.actamat.2006.03.014

Google Scholar

[3] T. F. Li, K. M. Yeh, W. C. Hsu, C. W. Lan, J. Cryst. Growth, 318 (2011) 219.

Google Scholar

[4] N. Stoddard, B. Wu, I. Witting, M. Wagner, Y. Park, G. Rozgonyi, R. Clark, Solid State Phenom, 131-133 (2008) 1.

Google Scholar

[5] B. Wu, N. Stoddard, R. Ma, R. Clark, J. Cryst. Growth, 310 (2008) 2178.

Google Scholar

[6] A. Jouini, D. Ponthenier, H. Ligner, N. Enjalbert, B. Marie, B. Drevet, E. Pihan, C. Cayron, T. Lafford, D. Camel, Prog. in Photovoltaics 20 (2012) 735.

DOI: 10.1002/pip.1221

Google Scholar

[7] Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, and T. Sekiguchi, J. Cryst. Growth. 401 (2014), 133.

DOI: 10.1016/j.jcrysgro.2014.03.016

Google Scholar

[8] C. W. Lan, W. C. Lan, T. F. Lee, A. Yu, Y. M. Yang, W. C. Hsu, A. Yang, J. Cryst. Growth 360 (2012) 68.

Google Scholar

[9] Y. M. Yang, A. Yu, B. Hsu, W. C. Hsu, A. Yang, C. W. Lan, Prog. Photovoltaics 23 (2015) 340.

Google Scholar

[10] Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, and K. Kakimoto, Sol. State Phenom. 205-206 (2014), 89.

DOI: 10.4028/www.scientific.net/ssp.205-206.89

Google Scholar