Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells

Ruy S. Bonilla; Katherine Collett; Lucy Rands; George Martins; Richard Lobo; Peter R. Wilshaw

doi:10.4028/www.scientific.net/SSP.242.67

Paper Titles

Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique
p.35

Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash
p.41

Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application
p.51

Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors
p.61

Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells
p.67

Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si
p.73

Discussion of A_Si-Si_i-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon
p.90

Investigation into Efficiency-Limiting Defects in mc-Si Solar Cells
p.96

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Stable, Extrinsic, Field Effect Passivation for...

Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells

Abstract:

A new technique is described by which ionic species can be rapidly transported into oxide films, and once there provide effective and stable field effect passivation to silicon surfaces. Field effect passivation in thermally grown oxide films has been achieved by embedding potassium ions using a combined drift and diffusion mechanism at high temperature. This process has been shown to be over 10 times faster than a pure diffusion process. The resulting passivation stable for periods exceeding 600 days, with lifetimes reaching 1.4 ms, equivalent to a surface recombination velocity (SRV) ≤ 5.7 cm/s, on 1 Ωcm, n-type, FZ-Si.

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Periodical:

Solid State Phenomena (Volume 242)

Pages:

67-72

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.67

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Online since:

October 2015

Authors:

Ruy S. Bonilla*, Katherine Collett, Lucy Rands, George Martins, Richard Lobo, Peter R. Wilshaw

Keywords:

Dielectric Film, Field Effect, Solar Cells, Surface Passivation

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References

[1] A. Goodrich, P. Hacke, Q. Wang, B. Sopori, R. Margolis, T.L. James, et al., A wafer-based monocrystalline silicon photovoltaics road map: Utilizing known technology improvement opportunities for further reductions in manufacturing costs, Sol. Energy Mater. Sol. Cells. 114 (2013).

DOI: 10.1016/j.solmat.2013.01.030

Google Scholar

[2] F. Granek, C. Reichel, Back-contact back-junction silicon solar cells under UV illumination, Sol. Energy Mater. Sol. Cells. 94 (2010) 1734–1740. doi: 10. 1016/j. solmat. 2010. 05. 038.

DOI: 10.1016/j.solmat.2010.05.038

Google Scholar

[3] R.S. Bonilla, F. Woodcock, P.R. Wilshaw, Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation, J. Appl. Phys. 116 (2014) 054102.

DOI: 10.1063/1.4892099

Google Scholar

[4] T.C. Kho, S.C. Baker-Finch, K.R. McIntosh, The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing, J. Appl. Phys. 109 (2011) 6.

DOI: 10.1063/1.3559260

Google Scholar

[5] J. Schmidt, A.G. Aberle, Easy-to-use surface passivation technique for bulk carrier lifetime measurements on silicon wafers, Prog. Photovoltaics. 6 (1998) 259–263.

DOI: 10.1002/(sici)1099-159x(199807/08)6:4<259::aid-pip215>3.0.co;2-z

Google Scholar

[6] R.S. Bonilla, P.R. Wilshaw, A technique for field effect surface passivation for silicon solar cells, Appl. Phys. Lett. 104 (2014) 232903. doi: 10. 1063/1. 4882161.

DOI: 10.1063/1.4882161

Google Scholar

[7] R.A. Sinton, A. Cuevas, M. Stuckings, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, in: Photovolt. Spec. Conf. 1996., Conf. Rec. Twenty Fifth IEEE, 1996: p.457.

DOI: 10.1109/pvsc.1996.564042

Google Scholar

[8] I.D. Baikie, S. Mackenzie, P.J.Z. Estrup, J.A. Meyer, Noise and the Kelvin method, Rev. Sci. Instrum. 62 (1991) 1326–1332. doi: 10. 1063/1. 1142494.

DOI: 10.1063/1.1142494

Google Scholar

[9] R.S. Bonilla, P.R. Wilshaw, Stable field effect surface passivation of n-type Cz silicon, in: Energy Procedia - Proc. 3rd Silicon PV Conf., Elsevier, Hamelin, Germany, 2013: p.816–822. doi: 10. 1016/j. egypro. 2013. 07. 351.

DOI: 10.1016/j.egypro.2013.07.351

Google Scholar

[10] A. Richter, S.W. Glunz, F. Werner, J. Schmidt, A. Cuevas, Improved quantitative description of Auger recombination in crystalline silicon, Phys. Rev. B. 86 (2012) 165202. doi: 10. 1103/PhysRevB. 86. 165202.

DOI: 10.1103/physrevb.86.165202

Google Scholar

[11] R.S. Bonilla, C. Reichel, M. Hermle, P.R. Wilshaw, On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation, J. Appl. Phys. 115 (2014) 144105. doi: 10. 1063/1. 4871075.

DOI: 10.1063/1.4871075

Google Scholar

[12] R.S. Bonilla, C. Reichel, M. Hermle, S. Senkader, P. Wilshaw, Controlled field effect surface passivation of crystalline n-type silicon and its application to back-contact silicon solar cells, in: 2014 IEEE 40th Photovolt. Spec. Conf., IEEE, 2014: p.0571.

DOI: 10.1109/pvsc.2014.6924985

Google Scholar