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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Discussion of ASi-Sii-Defect Model in Frame of...

Discussion of A_Si-Si_i-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon

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Abstract:

Further experimental support for the A_Si-Si_i-defect as cause of light-induced degradation and as the defect responsible for a photoluminescence peak called P line in indium doped silicon is given. The A_Si-Si_i-defect model has two main implications related to oxygen clustering during Czochralski crystal growth and the common understanding of the boron interstitial defect. These implications are discussed and it is shown that the A_Si-Si_i-defect model is in agreement with available experimental data related to oxygen clustering and the boron interstitial defect.

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Solid State Phenomena (Volume 242)

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90-95

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https://doi.org/10.4028/www.scientific.net/SSP.242.90

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October 2015

Authors:

Kevin Lauer*, Christian Möller, Dirk Schulze, Carsten Ahrens, Jan Vanhellemont

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Light-Induced Degradation, P Line, Silicon

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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