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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Experimental Proof of the Slow Light-Induced...

Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon

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Abstract:

We present new experimental data on light-induced degradation due to the boron oxygen defect in compensated n-type silicon. We are the first to show that both defect components known from p-type silicon are formed in compensated n-type silicon. A parameterization of the injection dependent recombination activity of the slower formed defect component is established. The formation kinetics of both defect components are studied and modeled under different conditions. It is found that the same rate factors as in p-type can describe the degradation, if the actual hole concentration under illumination is taken into account. The regeneration process known to permanently deactivate boron oxygen defects in p-type is successfully applied to n-type material and the illumination stability of the regenerated state is tested and proven.

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Periodical:

Solid State Phenomena (Volume 242)

Pages:

102-108

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.102

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Online since:

October 2015

Authors:

Tim Niewelt*, Jonas Schön, Juliane Broisch, Stefan Rein, Jonas Haunschild, Wilhelm Warta, Martin C. Schubert

Keywords:

Boron Oxygen Defect, Compensated n-Type Silicon, Czochralski-Grown Silicon, Light-Induced Degradation

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Fischer and W. Pschunder. in Proceedings of the 10th IEEEPV. 1973. Palo Alto, USA.

[2] S. Rein and S.W. Glunz, Appl Phys Lett 82(7), (2003): pp.1054-56.

[3] K. Bothe and J. Schmidt, J Appl Phys 99(1), (2006): p.013701.

[4] V.V. Voronkov and R. Falster, J Appl Phys 107(053509), (2010): pp.1-8.

[5] A. Herguth, G. Schubert, et al. in Proceedings of the 4th WCPEC. 2006. Hawaii, USA.

[6] R. Kopecek, J. Arumughan, et al. in Proceedings of the 23rd EUPVSEC. 2008. Valencia.

[7] D. Macdonald, F. Rougieux, et al., J Appl Phys 105, (2009): p.093704.

[8] B. Lim, A. Liu, et al., Appl Phys Lett 95(23), (2009): p.232109.

[9] T. Schutz-Kuchly, J. Veirman, et al., Appl Phys Lett 96, (2010): p.

[10] V.V. Voronkov, R. Falster, et al., Solid State Phenomena 178-179, (2011): pp.139-146.

[11] V.V. Voronkov, R. Falster, et al., J Appl Phys 110(6), (2011): p.063515.

[12] B. Lim. Thesis, Leibnitz University Hannover. 2012, http: /d-nb. info/1021189596.

[13] M. Forster, E. Fourmond, et al., Appl Phys Lett 100(4), (2012): p.042110.

[14] J. Broisch, J. Haunschild, et al., IEEE J. Photovolt. 5(1), (2015): pp.269-275.

[15] J. Seiffe, L. Gautero, et al., J. Appl. Phys. 109(3), (2011): p.034105.

[16] J. Giesecke, M.C. Schubert, et al., Appl Phys Lett 97(9), (2010): p.092109.

[17] S. Wilking, M. Forster, et al., Sol Energ Mat Sol C (submitted), (2015): p.

[18] R.A. Sinton and A. Cuevas, Appl Phys Lett 69(17), (1996): pp.2510-2.

[19] F. Dannhäuser, Solid-State Electronics 15(12), (1972): pp.1371-5.

[20] J. Krausse, Solid-State Electronics 15(12), (1972): pp.1377-81.

[21] M. Forster, P. Wagner, et al., Sol Energ Mat Sol C 120, (2014): pp.390-395.

[22] F. Schindler, M. Forster, et al., Sol Energ Mat Sol C 131, (2014): pp.92-99.

[23] W. Shockley and W.T.J. Read, Physical Review 87(5), (1952): pp.835-42.

[24] R.N. Hall, Physical Review 87(2), (1952): p.387.

[25] J.D. Murphy, K. Bothe, et al., J Appl Phys 111(11), (2012): p.113709.

[26] T. Niewelt, J. Broisch, et al., Energy Procedia (accepted), (2015): p.

[27] A. Herguth and G. Hahn, J Appl Phys 108(11), (2010): p.

[28] S. Wilking, C. Beckh, et al., Sol Energ Mat Sol C 131(0), (2014): pp.2-8.

[29] C. Sun, F.E. Rougieux, et al., J Appl Phys 117(4), (2015): p.045702.