Paper Titles

Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon
p.102

Low Temperature Internal Gettering of Bulk Defects in Silicon Photovoltaic Materials
p.109

Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers
p.120

Minority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter Formation
p.126

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers
p.135

Electronic Properties of Dislocations
p.141

Interplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in Si
p.147

Spatial Distribution of the Dislocation Trails in Silicon
p.155

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon
p.163

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Vacancy Species Produced by Rapid Thermal...

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

Article Preview

Abstract:

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (V_s) along with two fast-diffusing species: a Watkins vacancy (V_w) manifested in irradiation experiments and fast vacancy (V_f) responsible for the high-T vacancy contribution into self-diffusion. The V_s species are lost during cooling stage of RTA, and the loss seems to occur by conversion of V_s into V_f followed by a quick out-diffusion of V_f. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of T_RTA and different cooling rates.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XVI

Info:

Periodical:

Solid State Phenomena (Volume 242)

Pages:

135-140

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.135

Citation:

Cite this paper

Online since:

October 2015

Authors:

Vladimir V. Voronkov, Robert Falster

Keywords:

Diffusion, Oxygen, Silicon, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] V. V. Voronkov and R. Falster, Solid State Phenomena 205-206, 157 (2014).

[2] V. V. Voronkov and R. Falster, Physica Status Solidi B 252, 816 (2014).

[3] G. D. Watkins, Mater. Science in Semiconductor Processing 3, 227 (2000).

[4] G. D. Watkins, J. Appl. Phys. 103, 106106 (2008).

[5] Y. Shimizu, M. Uematsu and K. M. Itoh, Phys. Rev. Lett. 98, 095901-1 (2007).

[6] H. Bracht, R. Kube, E. Huger and H. Schmidt, Solid State Phenomena 205-206, 151 (2014).

[7] H. Bracht, E. E. Haller and R. Clark-Felps, Phys. Rev. Lett. 81, 393 (1998).

[8] A. Ural, P. B. Griffin and J. D. Plummer, Appl. Phys. Lett. 73, 1706 (1998).

[9] A. Ural, P. B. Griffin and J. D. Plummer, Phys. Rev. Lett. 83, 3454 (1999).

[10] V. V. Voronkov and R. Falster, Materials Science and Engineering B 134, 227 (2006).

[11] N. A. Stolwijk, B. Schuster and J. Holzl, Appl. Phys. A 33, 133 (1984).

[12] H. Bracht, N. A. Stolwijk and H. Mehrer, Phys. Rev. B 52, 16542 (1995).

[13] M. Jacob, P. Pichler, H. Ryssel, R. Falster, M. Cornara, D. Gambaro, M. Olmo and M. Pagani, Solid State Phenomena 57-58, 349 (1997).

DOI: 10.4028/www.scientific.net/ssp.57-58.349

[14] R. Falster, V. V. Voronkov and F. Quast, Phys. Stat. Sol. (b) 222, 219 (2000).

[15] V. V. Voronkov, R. Falster and P. Pichler, Appl. Phys. Lett. 104, 032106 (2014).

[16] H. Bracht, J. Fage Peterson, N. Zangenberg, A. Nylandsted Larsen, E. E. Haller, G. Lully and M. Posselt, Phys. Rev. Lett. 91, 245502-1 (2003).

[17] M. Akatsuka, M. Okui and K. Sueoka, Nuclear Instruments and Methods in Physics Research B 186, 45 (2002).

[18] S. Mizuo, T. Kusaka, A. Shintani, M. Nanba and H. Higuchi, J. Appl. Physics 54, 3860 (1983).

[19] V. V. Voronkov and R. Falster, J. Electrochem. Soc. 149, G167 (2002).