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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Interplay of Ni and Au Atoms with Dislocations and...

Interplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in Si

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Abstract:

We show experimentally that dislocations in Si crystals can generate some unknown vacancy complexes Vx_trail in their slip planes during their motion at 600°C. Most of these “dislocation trail defects” are not electrically active but can be detected by their reaction with gold atoms during in-diffusion experiments. It was also shown that contrary to gold, the Vx_trail-complexes do not react with interstitial Ni atoms. It means that the binding energy E_bind of Vx_trail complexes is quite high (E_bind>2.5eV), higher than the binding energy of vacancy complexes generated during FZ-Si crystal growth. It was also shown that Ni in-diffusion results in a strong increase of electron-hole recombination at dislocations and in a strong increase of dislocation-related DLTS C-line.

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Periodical:

Solid State Phenomena (Volume 242)

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147-154

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https://doi.org/10.4028/www.scientific.net/SSP.242.147

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Online since:

October 2015

Authors:

V. Kveder*, M. Khorosheva, Michael Seibt

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Deep Level Transient Spectroscopy, Dislocations, Impurities, Laser Beam Induced Current, Silicon

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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