Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

Abstract:

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

• Periodical: Solid State Phenomena (Volume 242)
• Pages: 163-168
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.242.163
• Online since: October 2015
• Authors: Ilia L. Kolevatov, Frank Herklotz, Viktor Bobal, Bengt Gunnar Svensson, Edouard V. Monakhov
• Keywords: DLTS, Hydrogen, Implantation, MCTS, Silicon, Vacancy-Hydrogen Complexes

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