Metastable Defects in Proton Implanted and Annealed Silicon

Moriz Jelinek; Johannes G. Laven; Naveen Ganagona; Reinhart Job; Werner Schustereder; Hans Joachim Schulze; Mathias Rommel; Lothar Frey

doi:10.4028/www.scientific.net/SSP.242.169

Paper Titles

Electronic Properties of Dislocations
p.141

Interplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in Si
p.147

Spatial Distribution of the Dislocation Trails in Silicon
p.155

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon
p.163

Metastable Defects in Proton Implanted and Annealed Silicon
p.169

The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature
p.175

Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy
p.184

Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H⁺ Ion Implantation into Silicon and Annealing
p.190

Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions
p.196

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Metastable Defects in Proton Implanted and...

Metastable Defects in Proton Implanted and Annealed Silicon

Abstract:

Two metastable defects with energy levels at Ec-0.28eV and Ec-0.37eV, which previously have been reported in proton implanted- and in proton implanted and annealed crystalline silicon are discussed. Recent results on the peculiar behavior of these defects upon periodical application of two different bias conditions during DLTS measurement are reviewed. Two specifically designed DLTS measurement sequences are proposed in order to further reveal the defects transformation rates and respective activation energies.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XVI

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 242)

Pages:

169-174

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.169

Citation:

Cite this paper

Online since:

October 2015

Authors:

Moriz Jelinek*, Johannes G. Laven, Naveen Ganagona, Reinhart Job, Werner Schustereder, Hans Joachim Schulze, Mathias Rommel, Lothar Frey

Keywords:

Crystalline Silicon, Metastable Defects, Proton Implantation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] E. Badr, P. Pichler, G. Schmidt, SSP 205-206 (2013) 260–264.

Google Scholar

[2] R. Job, W.R. Fahrner, N.M. Kazuchits, A.G. Ulyashin, MRS Proc. 513 (1998).

Google Scholar

[3] J.G. Laven, Protonendotierung von Silizium: Untersuchung und Modellierung protoneninduzierter Dotierungsprofile in Silizium. Univ. Diss., Erlangen-Nürnberg, 2013, Springer Vieweg, Wiesbaden, (2014).

DOI: 10.1007/978-3-658-07390-9

Google Scholar

[4] R. Job, J.G. Laven, F. -J. Niedernostheide, H. -J. Schulze, H. Schulze, W. Schustereder, Phys. Status Solidi A 209 (2012) 1940–(1949).

DOI: 10.1002/pssa.201200151

Google Scholar

[5] J. Hartung, J. Weber, Materials Science and Engineering B 4 (1989) 47–50.

Google Scholar

[6] J.G. Laven, M. Jelinek, R. Job, W. Schustereder, H. -J. Schulze, M. Rommel, L. Frey, Phys. Status Solidi B 251 (2014) 2189–2192.

DOI: 10.1002/pssb.201400028

Google Scholar

[7] Y. Tokuda, T. Sugiyama, S. Kanazawa, H. Iwata, M. Ishiko, Jpn. J. Appl. Phys. 42 (2003) 6833–6834.

Google Scholar

[8] Y. Tokuda, T. Sugiyama, H. Iwata, M. Ishikko, Jpn. J. Appl. Phys. 43 (2004) 3376–3377.

Google Scholar

[9] Y. Tokuda, W. Nakamura, H. Terashima, Mater. Sci. in Semicond. Proc. 9 (2006) 288–291.

Google Scholar

[10] M. Jelinek, J.G. Laven, M. Rommel, W. Schustereder, H. -J. Schulze, L. Frey, R. Job, ECS Transactions 64 (2014) 173–185.

DOI: 10.1149/06411.0173ecst

Google Scholar

[11] Y. Tokuda, W. Nakamura, K. Nakashima, H. Iwata, Jpn. J. Appl. Phys. 44 (2005) 3789–3792.

Google Scholar