Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions

Andrey SARIKOV

doi:10.4028/www.scientific.net/SSP.242.196

Paper Titles

Metastable Defects in Proton Implanted and Annealed Silicon
p.169

The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature
p.175

Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy
p.184

Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H⁺ Ion Implantation into Silicon and Annealing
p.190

Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions
p.196

Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy
p.205

Mössbauer Spectroscopy on Fe Impurities in Si Materials
p.211

Enhanced Internal Gettering of Iron in n/n⁺ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient
p.218

A Density Functional Study of Iron Segregation at ISFs and Σ5-(001) GBs in mc-Si
p.224

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Kinetic Model of Precipitate Growth during Phase...

Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions

Abstract:

In this paper, the kinetics of precipitate growth in metastable binary solid solutions is analyzed considering two mechanisms: (i) diffusion of the one component from the bulk of composition matrix and its incorporation in the precipitate, and (ii) emission and outdiffusion of the second component from the interface of precipitate with surrounding matrix. A kinetic model is proposed that enables a description of these both mechanisms in a unique way. Using this model, the mechanism of oxygen emission and outdiffusion from the interface of Si precipitates with the silicon oxide surrounding is confirmed to determine the phase separation kinetics upon high temperature annealing nonstoichiometric silicon oxide films.

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Solid State Phenomena (Volume 242)

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196-202

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.196

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Online since:

October 2015

Authors:

Andrey SARIKOV*

Keywords:

Binary Solid Solution, Kinetic Model, Nonstoichiometric Si Oxide, Phase Separation

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