Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy

Yuji Ino; Kiyotaka Tanaka; Kazumasa Sakata; Yutaka  Yoshida

doi:10.4028/www.scientific.net/SSP.242.205

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Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions
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Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy

Abstract:

The charge states of Fe interstitial atoms in Si are investigated by Mössbauer spectroscopy. The spectra of ⁵⁷Fe-diffused Si wafers are measured directly after the deposition at room temperature. The Fermi levels are changed by applying the external voltages to a Schottky junction, and by using different Si wafers with different dopant concentrations, providing different fractions of interstitial Fe_int⁰ and Fe_int⁺ Mössbauer components which correspond to the isomer shifts of 0.40 and 0.80 mm/s, respectively.

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Solid State Phenomena (Volume 242)

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205-210

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https://doi.org/10.4028/www.scientific.net/SSP.242.205

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Online since:

October 2015

Authors:

Yuji Ino*, Kiyotaka Tanaka, Kazumasa Sakata, Yutaka Yoshida

Keywords:

Fermi Level Dependence, Iron Impurities in Silicon, Mössbauer Spectroscopy, Silicon

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