Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy

Ronald Stübner; Vladimir Kolkovsky; Jörg Weber; N.V. Abrosimov

doi:10.4028/www.scientific.net/SSP.242.184

Paper Titles

Spatial Distribution of the Dislocation Trails in Silicon
p.155

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon
p.163

Metastable Defects in Proton Implanted and Annealed Silicon
p.169

The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature
p.175

Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy
p.184

Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H⁺ Ion Implantation into Silicon and Annealing
p.190

Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions
p.196

Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy
p.205

Mössbauer Spectroscopy on Fe Impurities in Si Materials
p.211

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Carbon-Hydrogen Complexes in n- and p-Type...

Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy

Abstract:

A deep level transient spectroscopy (DLTS) study on n- and p-type diluted Si_1-xGe_x alloys (x=0, 0.011, 0.026, 0.046, and 0.070) is presented. Defect levels of several carbon-hydrogen (CH) complexes are observed. The high-resolution Laplace-DLTS technique allows us to detect configurations of defects which contain different numbers of Ge atoms in the first and second-nearest neighbourhood of the CH complexes. The electrical properties of the defects will be analysed and their origin will be discussed.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XVI

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 242)

Pages:

184-189

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.184

Citation:

Cite this paper

Online since:

October 2015

Authors:

Ronald Stübner*, Vladimir Kolkovsky, Jörg Weber, N.V. Abrosimov

Keywords:

Carbon-Hydrogen Complexes, Deep Level Transient Spectroscopy, DLTS, Laplace DLTS, SiGe, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] A. Endrös, Phys. Rev. Lett., vol. 63, pp.70-73, (1989).

Google Scholar

[2] Y. Kamiura, M. Tsutsue, Y. Tamashita, F. Hashimoto, and K. Okuno, J. Appl. Phys., vol. 78, p.4478, (1995).

Google Scholar

[3] M. Yoneta, Y. Kamiura, and F. Hashimoto, J. Appl. Phys., vol. 70, pp.1295-1308, (1991).

Google Scholar

[4] O. Andersen, A. R. Peaker, L. Dobaczewski, K. B. Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Öberg, Phys. Rev. B, vol. 66, p.235205, (2002).

DOI: 10.1103/physrevb.66.235205

Google Scholar

[5] R. Stübner, Vl. Kolkovsky, and J. Weber, submitted to Appl. Phys. Lett, (2015).

Google Scholar

[6] L. Dobaczewski, K. Goscinski, K. Bonde Nielsen, A. Nylandsted Larsen, and J. Lundsgaard Hansen, Phys. Rev. Lett., vol. 83, pp.4582-4585, (1999).

DOI: 10.1103/physrevlett.83.4582

Google Scholar

[7] K. Goscinski, L. Dobaczewski, K. B. Nielsen, A. N. Larsen, and A. R. Peaker, Phys. Rev. B, vol. 63, p.235309, (2001).

Google Scholar

[8] V. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov, Z. R. Zytkiewicz, and A. R. Peaker, Phys. Rev. B, vol. 74, p.195204, (2006).

Google Scholar

[9] V. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov, Z. R. Zytkiewicz, and A. R. Peaker, J. Phys.: Condens. Matter, vol. 17, pp.2267-2272, (2005).

DOI: 10.1088/0953-8984/17/22/014

Google Scholar

[10] L. Dobaczewski, A. R. Peaker, and K. B. Nielsen, J. Appl. Phys., vol. 96, pp.4689-4728, (2004).

Google Scholar

[11] L. Scheffler, V. Kolkovsky, R. Stübner, and J. Weber, submitted to J. Appl. Phys., (2015).

Google Scholar