Paper Titles

50 cm Size Seed Cast Si Ingot Growth and its Characterization
p.30

Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique
p.35

Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash
p.41

Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application
p.51

Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors
p.61

Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells
p.67

Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si
p.73

BO-Related Defects: Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration
p.80

Discussion of A_Si-Si_i-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon
p.90

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Impact of the Gate Material on the Deep Levels in...

Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors

Article Preview

Abstract:

Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Insulator-Semiconductor (MIS) capacitors, consisting of a p⁺ or n⁺ a-Si:H gate on an intrinsic i-a-Si:H passivation layer deposited on crystalline silicon n-or p-type substrates. It is shown that the type of gate has a pronounced impact on the obtained spectra, whereby both the kind of defects (dangling bonds at the a-Si:H/(100) c-Si interface (P_b0 defects) or in the amorphous silicon layer (D defects) and their relative importance (peak amplitude) may be varied. The highest trap densities have been found for the p⁺ a-Si:H gate capacitors on an n-type Si substrate. In addition, the spectra may exhibit unexpected negative peaks, suggesting minority carrier capture. These features are tentatively associated with interface states at the p⁺ or n⁺ a-Si:H/i-a-Si:H interface. Their absence in Al-gate capacitors is in support of this hypothesis.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XVI

Info:

Periodical:

Solid State Phenomena (Volume 242)

Pages:

61-66

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.61

Citation:

Cite this paper

Online since:

October 2015

Authors:

Eddy Simoen, Valentina Ferro, Barry O’Sullivan

Keywords:

Amorphous Silicon, Dangling Bonds, Deep Level Transient Spectroscopy, Heterojunctions, Interface States, Silicon Passivation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S. De Wolf, A. Descoeudres, Z.C. Holman, C. Ballif, High-efficiency silicon heterojunction solar cells: A review, Green 2 (2012) 7-24.

DOI: 10.1515/green-2011-0018

[2] J. -W. A. Schüttauf, K.H.M. van der Werf, I.M. Kielen, W.G.J.H.M. van Stark, J.K. Rath, R.E.I. Schropp, Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition, Appl. Phys. Lett. 98 (2011).

DOI: 10.1063/1.3579540

[3] C. Leendertz, N. Mingirulli, T.F. Schulze, J.P. Kleider, B. Rech, L. Korte, Discerning passivation mechanisms at a-Si: H/c-Si interfaces by means of photoconductance measurements, Appl. Phys. Lett. 98 (2011) 202108/1-3.

DOI: 10.1063/1.3590254

[4] A. Descoeudres, L. Barraud, S. De Wolf, B. Strahm, D. Lachenal, C. Guérin, Z.C. Holman, F. Zicarelli, B. Memaurex, J. Seif, J. Holovsky, C. Ballif, Improved amorphous/crystalline interface passivation by hydrogen plasma treatment, Appl. Phys. Lett. 99 (2011).

DOI: 10.1063/1.3641899

[5] V.A. Dao, Y. Lee, S. Kim, J. Cho, S. Ahn, Y. Kim, N. Lakshminarayan, J. Yi, Effect of valence band offset and surface passivation quality in the silicon heterojunction solar cells, J. Electrochem. Soc. 158 (2011) H1129-H1132.

DOI: 10.1149/2.031111jes

[6] C. -L. Zhong, R. -H. Yao, K. -W. Geng, An improvement of the capacitance-voltage method to determine the band offsets in a-Si: H/c-Si heterojunctions, IEEE Trans. Electron Devices 61 (2014) 394-399.

DOI: 10.1109/ted.2013.2295459

[7] T.F. Schulze, C. Leendertz, N. Mingirulli, L. Korte, B. Rech, Impact of Fermi-level dependent defect equilibration on Voc of amorphous/crystalline silicon heterojunction solar cells, Energy Procedia 8 (2011) 282-287.

DOI: 10.1016/j.egypro.2011.06.137

[8] N.H. Thoan, M. Jivanescu, B.J. O'Sullivan, L. Pantisano, I. Gordon, V.V. Afanas'ev, A. Stesmans, Correlation between interface traps and paramagnetic defects in c-Si/a-Si: H heterojunctions, Appl. Phys. Lett. 100 (2012) 142101/1-3.

DOI: 10.1063/1.3698386

[9] S. De Wolf, C. Ballif, M. Kondo, Kinetics of a-Si: H bulk defect and a-Si: H/c-Si interface-state reduction, Phys. Rev. B 85 (2012) 113302/1-4.

[10] B.M. George, J. Behrends, A. Schnegg, T.F. Schulze, M. Fehr, L. Korte, B. Rech, K. Lips, M. Rohrmüller, E. Rauls, W.G. Schmidt, U. Gerstmann, Atomic structure of interface states in silicon heterojunction solar cells, Phys. Rev. Lett. 110 (2013).

DOI: 10.1103/physrevlett.110.136803

[11] S. Olibet, E. Vallat-Sauvain, C. Ballif, Model for a-Si: H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds. Phys. Rev. B 76 (2007) 035326/1-14.

DOI: 10.1103/physrevb.76.035326

[12] S. De Wolf, S. Olibet, C. Ballif, Stretched-exponential a-Si: H/c-Si interface recombination decay, Appl. Phys. Lett. 93 (2008) 032101/1-3.

DOI: 10.1063/1.2956668

[13] C. Leendertz, R. Stangl, T.F. Schulze, M. Schmidt, L. Korte, A recombination model for a-Si: H/c-Si heterostructures, Phys. Stat. Sol. C 7 (2010) 1005-1010.

DOI: 10.1002/pssc.200982698

[14] N.H. Thoan, K. Keunen, V.V. Afasas'ev, A. Stesmans, Interface state energy distribution and Pb defects at Si(110)/SiO2 interface: Comparison to (111) and (100) silicon orientations. J. Appl. Phys. 109 (2011) 013710/1-6.

DOI: 10.1063/1.3527909

[15] R.A. Street, J. Zesch, M.J. Thompson, Effects of doping on transport and deep trapping in hydrogenated amorphous silicon, Appl. Phys. Lett. 43 (1983) 672-674.

DOI: 10.1063/1.94441

[16] E. Simoen, V. Ferro, B.J. O'Sullivan, Deep-level transient spectroscopy of Al/a-Si: H/c-Si structures for heterojunction solar cell applications. J. Appl. Phys. 116 (2014) 234501/1-8.

DOI: 10.1063/1.4904082

[17] L. Dobaczewski, S. Bernardini, P. Kruszewski, P.K. Hurley, V.P. Markevich, I.D. Hawkins, A.R. Peaker, Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy, Appl. Phys. Lett. 92 (2008).

DOI: 10.1063/1.2939001

[18] E. Simoen, C. Gong, N.E. Posthuma, E. Van Kerschaever, J. Poortmans, R. Mertens, A DLTS study of SiO2 and SiO2/SiNx surface passivation of silicon, J. Electrochem. Soc. 158 (2011) H612-H617.

DOI: 10.1149/1.3568952

[19] P. van Staa, H. Rombach, R. Kassing, Time-dependent response of interface states in indium phosphide metal-insulator-semiconductor capacitors investigated with constant-capacitance deep-level transient spectroscopy, J. Appl. Phys. 54 (1983).

DOI: 10.1063/1.332582

[20] H. Lakhdari, D. Vuillaume, J.C. Bourgoin, Spatial and energetic distribution of Si-SiO2 near-interface states, Phys. Rev. B 38 (1988) 13124-13132.

DOI: 10.1103/physrevb.38.13124

[21] R.S. Crandall, Trap spectroscopy of a-Si: H diodes using transient current techniques, J. Electron. Mater. 9 (1980) 713-726.