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Online since: September 2013
Authors: Dan Tian Zhang, Yong Chang Liu, Zhi Xia Qiao, Jie Huo, Hui Jun Li, Ze Sheng Yan
Many studies have been done on the effect of austenization conditions on microstructures and mechanical performances in pipeline steels, such as heating temperature, heating rate, holding time, austenite grain size etc. [4,5]In the present paper, the dynamics of austenizing transformation was investigated using a high-resolution differential dilatometer, which resulted in a deep understanding on the austenizing transformation process.
On the other hand, the number of the particles with relatively large size is much lower than that of the kind with smaller size.
From Fig. 3b, many white grains can be seen in the 780 oC-quenched sample, which is the untransformed ferrite matrix.
On the other hand, the number of the particles with relatively large size is much lower than that of the kind with smaller size.
From Fig. 3b, many white grains can be seen in the 780 oC-quenched sample, which is the untransformed ferrite matrix.
Online since: September 2011
Authors: Zong Rong Ying, Zhi Min Dang, Xiao Hui Yan, Xiu Ouyang, Yan Ying Gao
Meanwhile because there is a large number of nucleation, the spherulite becomes fine.
The complete crystallization and the large crystal grain make the diffraction peak strong, sharp and symmetrical.
Meanwhile, the addition of GO destroys the structure of polypropylene crystallization grain.
The complete crystallization and the large crystal grain make the diffraction peak strong, sharp and symmetrical.
Meanwhile, the addition of GO destroys the structure of polypropylene crystallization grain.
Online since: April 2005
Authors: Chan Gyu Lee, Hui Myeong Lee, Byeong Seon Lee, Yasunori Hayashi, Bon Heun Koo
NA and NB the are
number of atomic planes of A and B in bilayered films, and Xλ is wavelength of the X-ray.
3.
This value agrees with that (0.6-1.1eV) reported in the literature for atomic diffusion along the grain boundaries in thin film systems[5].
This results suggest that atoms diffuse along the interface of Co/Ta and/or the grain boundaries in Co/Ta thin film.
This value agrees with that (0.6-1.1eV) reported in the literature for atomic diffusion along the grain boundaries in thin film systems[5].
This results suggest that atoms diffuse along the interface of Co/Ta and/or the grain boundaries in Co/Ta thin film.
Online since: August 2007
Authors: Snezana Dević, R. Carli
Reviews 2a, 2b and
2c (Fig. 4) show the results of action of casting powder 2 through small erosions and changes of
SEN samples' microstructure which are almost identical as primary SEN microstructure. 2a - shows
smaller penetration of slag and rest of the primary SEN microstructure with good visible graphite
(fiber) strips and grains of corundum, 2b - similar review of microstructure's appearance as in 2a,
while 2c represents microstructures where directed graphite strips are appearing, and in the same
time they prevent further penetration of slag.
The results of action of casting powder 3 which are shown in 3a, 3b and 3c (Fig. 4) represent the biggest erosion and deep penetration slag in microstructure, appearance of spinel and rather changed primary SEN microstructure with small number of corundum grains and graphite (fiber) strips.
The results of action of casting powder 3 which are shown in 3a, 3b and 3c (Fig. 4) represent the biggest erosion and deep penetration slag in microstructure, appearance of spinel and rather changed primary SEN microstructure with small number of corundum grains and graphite (fiber) strips.
Online since: March 2010
Authors: Long Mao Zhao, Zhi Qiang Li, Xiao Hu Yao
Gasholder occurred a great number of leak gas dropped from 20 meter to 10 meter at the
end of 2002.
Test results shown in Fig.2(b) have indicated that grain size of tissue of every region is uniform, and grain growth of thermal impact region was not found, but disperse blackspot existed in the matrix before erosion, seeing Fg.2(a).
Test results shown in Fig.2(b) have indicated that grain size of tissue of every region is uniform, and grain growth of thermal impact region was not found, but disperse blackspot existed in the matrix before erosion, seeing Fg.2(a).
Online since: July 2011
Authors: Bing Hai Lv, Duc Nam Nguyen, Ju Long Yuan, Zhe Wu
A number of precision manufacturing applications use the lapping process as a critical technology to achieve thickness tolerance and surface quality specification[9].
The contact zone between the workpiece and the tool is fed continuously by the SiC abrasive grains slurry (see Fig.2).
The abrasive grains used were of silicon carbide (#1000 SiC) type whose properties were given in the following: hardness (9.4 Mohs), density (3.1 g/cm3) and elastic modulus (410 GPa).
The contact zone between the workpiece and the tool is fed continuously by the SiC abrasive grains slurry (see Fig.2).
The abrasive grains used were of silicon carbide (#1000 SiC) type whose properties were given in the following: hardness (9.4 Mohs), density (3.1 g/cm3) and elastic modulus (410 GPa).
Online since: November 2016
Authors: Ryotaro Tokoro, Yuji Ichikawa, Kazuhiro Ogawa
Acknowledgement
This work was supported by JSPS KAKENHI Grant Number 15H05501.
Fukuya, Development of Micro Tensile Testing Method in an FIB System for Evaluating Grain Boundary Strength, Materials Transactions. 52 (2011) 20-24
Fukuya, Development of micro tensile testing method in an FIB system for evaluating grain boundary strength.
Fukuya, Development of Micro Tensile Testing Method in an FIB System for Evaluating Grain Boundary Strength, Materials Transactions. 52 (2011) 20-24
Fukuya, Development of micro tensile testing method in an FIB system for evaluating grain boundary strength.
Online since: April 2007
Authors: Liang Sheng Qiang, Mu Han, Dong Yan Tang
A variety of processes
have been employed by a number of researchers to produce PZT films[1~3], such as chemical vapor
deposition (CVD), RF sputtering, pulsed laser reposition, metal organic chemical vapor deposition
(MOCVD)[4] and sol-gel.
The AFM of the film RTA treated at 650°C for 1 min exhibites a narrow distribution of grain sizes, as shown in Fig.3.
Second, from AFM results, the dense thin film morphology also impedes space-charge accumulation at or near the electrode ferroelectric interface through grain boundary.
The AFM of the film RTA treated at 650°C for 1 min exhibites a narrow distribution of grain sizes, as shown in Fig.3.
Second, from AFM results, the dense thin film morphology also impedes space-charge accumulation at or near the electrode ferroelectric interface through grain boundary.
Online since: April 2010
Authors: Béla Pécz, Bernard Enrico Watts, Gábor Battistig, Giancarlo Salviati, Giovanni Attolini, Matteo Bosi, Francesca Rossi, László Dobos
As the temperature increases above 1200°C,
a 2D SiC layer is nucleated (see Fig. 2 b,c), but islands and grains incompletely buried or
overgrown on top are observed by AFM and SEM (Fig. 3 and 4).
A typical AFM image of the sample grown at 1200°C is reported in Fig. 4 and shows the presence of large prismatic grains 2 µm wide and 1 µm high.
The insets show slope angle plots of the distribution of the facet inclinations obtained by measuring the number of points within a given area having a certain inclination from the surface plane.
A typical AFM image of the sample grown at 1200°C is reported in Fig. 4 and shows the presence of large prismatic grains 2 µm wide and 1 µm high.
The insets show slope angle plots of the distribution of the facet inclinations obtained by measuring the number of points within a given area having a certain inclination from the surface plane.
Online since: March 2012
Authors: Grzegorz Michta, Aleksandra Czyrska-Filemonowicz, Adam Kruk, Władysław Osuch
In addition to various types of carbide precipitated at the grain boundaries of ferrite, randomly distributed Mo2C carbides were observed inside ferrite grains.
The parameters used in simulation are follows: electron energy 3 keV , beam radius 5 nm, number of electron to simulate 2000, total and partial cross section –Rutherford.
The parameters used in simulation are follows: electron energy 3 keV , beam radius 5 nm, number of electron to simulate 2000, total and partial cross section –Rutherford.