SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
G. Attolini et al., "SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide", Materials Science Forum, Vols. 645-648, pp. 139-142, 2010