SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide

Abstract:

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3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

139-142

DOI:

10.4028/www.scientific.net/MSF.645-648.139

Citation:

G. Attolini et al., "SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide", Materials Science Forum, Vols. 645-648, pp. 139-142, 2010

Online since:

April 2010

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Price:

$35.00

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