SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide

Giovanni Attolini; Matteo Bosi; Francesca Rossi; Bernard Enrico Watts; Giancarlo Salviati; Gábor Battistig; László Dobos; Béla Pécz

doi:10.4028/www.scientific.net/MSF.645-648.139

Paper Titles

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
p.123

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
p.127

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
p.131

3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
p.135

SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
p.139

Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
p.143

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
p.147

Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)
p.151

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates
p.155

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SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide

Abstract:

3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.