Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

Abstract:

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This research is focused on the influence of high C/Si ratios and low pressure on n-type doping concentration and surface defects of 4H-SiC C-face epilayers. N-type doping concentration decreases as C/Si ratio increases from 3.0 to 4.0 and pressure reduces from 100 mbar to 50 mbar; defect densities decrease as pressure increases at both C/Si ratios of 3.0 and 4.0. RMS roughness is about 0.21 nm for all C-face samples, independent of C/Si ratios of 3.0 and 4.0 and pressure from 50 mbar to 100 mbar. However, the influence of growth temperature on doping concentration and surface defects can not be clearly observed in this work.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

123-126

DOI:

10.4028/www.scientific.net/MSF.645-648.123

Citation:

K. Y. Lee et al., "Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth", Materials Science Forum, Vols. 645-648, pp. 123-126, 2010

Online since:

April 2010

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$35.00

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