Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

Kung Yen Lee; Shin Yi Lee; Chih Fang Huang

doi:10.4028/www.scientific.net/MSF.645-648.123

Paper Titles

Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
p.107

Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC
p.111

Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
p.115

Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
p.119

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
p.123

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
p.127

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
p.131

3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
p.135

SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
p.139

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Doping Concentration and Surface Morphology of...

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

Abstract:

This research is focused on the influence of high C/Si ratios and low pressure on n-type doping concentration and surface defects of 4H-SiC C-face epilayers. N-type doping concentration decreases as C/Si ratio increases from 3.0 to 4.0 and pressure reduces from 100 mbar to 50 mbar; defect densities decrease as pressure increases at both C/Si ratios of 3.0 and 4.0. RMS roughness is about 0.21 nm for all C-face samples, independent of C/Si ratios of 3.0 and 4.0 and pressure from 50 mbar to 100 mbar. However, the influence of growth temperature on doping concentration and surface defects can not be clearly observed in this work.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

123-126

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.123

Citation:

Cite this paper

Online since:

April 2010

Authors:

Kung Yen Lee, Shin Yi Lee, Chih Fang Huang

Keywords:

Carbon Face, Epitaxial Growth, Surface Defect

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Izumi, K. Nakayama, R. Ishii, K. Asano, and Y. Sugawara, Mater. Sci. Forum Vol. 483 (2005), p.97.

DOI: 10.4028/www.scientific.net/msf.483-485.97

Google Scholar

[2] Y. Tanaka, K. Fukuda, K. Arai, K. Kojima, T. Suzuki, and T. Yatsuo, Appl. Phys. Lett. Vol. 84 (2004), p.1774.

Google Scholar

[3] K. Nakayama, Y. Sugawara, H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Asano, and R. Ishii, Mater. Sci. Forum Vol. 483 (2005), p.969.

DOI: 10.4028/www.scientific.net/msf.483-485.969

Google Scholar

[4] K. Kojima, H. Okumura, S. Kuroda, and K. Arai, J. Crystal Growth Vol. 269 (2004), p.367.

Google Scholar

[5] K. Wada, T. Kimoto, K. Nishikawa, and H. Matsunami, J. Crystal Growth Vol. 291 (2006), p.370.

Google Scholar

[6] H. Matsunami and T. Kimoto, Mater. Sci. Eng. Vol. R 20 (1997), p.125.

Google Scholar

[7] K. Kojima, T. Suzuki, S. Kuroda, J. Nishio and K. Arai, Jpn. J. Appl. Phys. Pt. 2, Vol. 42 (2003), p. L637.

Google Scholar

[8] T. Kimoto, A. Itoh and H. Matsunami, Phys. Status Solidi (b) Vol. 202 (1997), p.247.

Google Scholar

[9] A. Golz, G. Horstmann, E. Stein von Kamienski and H. Kurz, Inst. Phys. Conf. Ser. Vol. 142 (1996), p.633.

Google Scholar

[10] U. Forsberg, O. Danielsson, A. Henry, M. K. Linnarsson, and E. Janzen, J. Crystal Growth Vol. 236 (2002), p.101.

Google Scholar

[11] C. Diaz-Guerra and J. Piqueras, J. Phys. Condens Matter, Vol. 16 (2004), p. S217.

Google Scholar

[12] A. Shrivastava, P. Muzykov, B. Pearman, S. M. Angel, and T. S. Sudarshan, Mater. Sci. Forum Vol. 600-603 (2009), p.139.

Google Scholar