Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Nikoletta Jegenyes; Jean Lorenzzi; Véronique Soulière; Jacques Dazord; François Cauwet; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.645-648.127

Paper Titles

Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC
p.111

Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
p.115

Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
p.119

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
p.123

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
p.127

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
p.131

3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
p.135

SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
p.139

Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
p.143

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Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Abstract:

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.