Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Abstract:

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Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

127-130

DOI:

10.4028/www.scientific.net/MSF.645-648.127

Citation:

N. Jegenyes et al., "Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature", Materials Science Forum, Vols. 645-648, pp. 127-130, 2010

Online since:

April 2010

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$35.00

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