Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
p.115
p.115
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
p.119
p.119
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
p.123
p.123
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
p.127
p.127
The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
p.131
p.131
3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
p.135
p.135
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
p.139
p.139
Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
p.143
p.143
Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
p.147
p.147
The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
Abstract:
Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.
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Periodical:
Materials Science Forum (Volumes 645-648)
Pages:
131-134
Citation:
Online since:
April 2010
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© 2010 Trans Tech Publications Ltd. All Rights Reserved
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