Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
E. Saito et al., "Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane", Materials Science Forum, Vols. 645-648, pp. 147-150, 2010