Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

Eiji Saito; Sergey Filimonov; Maki Suemitsu

doi:10.4028/www.scientific.net/MSF.645-648.147

Paper Titles

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
p.131

3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
p.135

SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
p.139

Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
p.143

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
p.147

Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)
p.151

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates
p.155

Tuning Residual Stress in 3C-SiC(100) on Si(100)
p.159

Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
p.163

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Low-Temperature, Low-Pressure and Ultrahigh-Rate...

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

Abstract:

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

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Materials Science Forum (Volumes 645-648)

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147-150

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.147

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April 2010

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Eiji Saito, Sergey Filimonov, Maki Suemitsu

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Chemical Vapor Deposition (CVD)

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